Gate field effect on spin transport signals in a lateral spin-valve device

Jae Hyun Kwon, Hyun Cheol Koo, Joonyeon Chang, Suk Hee Han, Jonghwa Eom

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The gate field effect on spin transport signals was detected in lateral ferromagnet-semiconductor hybrid devices. In the diffusive model, the change in the channel resistance induces a spin transport signal difference, but a non-local measurement shows that ΔR is almost constant with varying the gate voltage. The reason is that the spin diffusion length is slightly decreased with decreasing gate voltage due to the stronger spin-orbit interaction. At T = 20 K, the spin diffusion length can be decreased by 2.5 % by applying a gate voltage of -3 V.

Original languageEnglish
Pages (from-to)2491-2495
Number of pages5
JournalJournal of the Korean Physical Society
Issue number5 PART 1
Publication statusPublished - 2008 Nov
Externally publishedYes


  • Gate field
  • Spin diffusion length
  • Spin-orbit interaction
  • Spin-valve device

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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