Gate field effect on spin transport signals in a lateral spin-valve device

The gate field effect on spin transport signals was detected in lateral ferromagnet-semiconductor hybrid devices. In the diffusive model, the change in the channel resistance induces a spin transport signal difference, but a non-local measurement shows that ΔR is almost constant with varying the gate voltage. The reason is that the spin diffusion length is slightly decreased with decreasing gate voltage due to the stronger spin-orbit interaction. At T = 20 K, the spin diffusion length can be decreased by 2.5 % by applying a gate voltage of -3 V.