Gate-induced carrier delocalization in quantum dot field effect transistors

Michael E. Turk, Ji Hyuk Choi, Soong Ju Oh, Aaron T. Fafarman, Benjamin T. Diroll, Christopher B. Murray, Cherie R. Kagan, James M. Kikkawa

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


We study gate-controlled, low-temperature resistance and magnetotransport in indium-doped CdSe quantum dot field effect transistors. We show that using the gate to accumulate electrons in the quantum dot channel increases the "localization product" (localization length times dielectric constant) describing transport at the Fermi level, as expected for Fermi level changes near a mobility edge. Our measurements suggest that the localization length increases to significantly greater than the quantum dot diameter.

Original languageEnglish
Pages (from-to)5948-5952
Number of pages5
JournalNano Letters
Issue number10
Publication statusPublished - 2014 Oct 8
Externally publishedYes


  • Quantum dots
  • cadmium selenide
  • delocalization
  • field-effect transistor
  • magnetoresistance
  • mobility edge

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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