Gate-induced carrier delocalization in quantum dot field effect transistors

Michael E. Turk, Ji Hyuk Choi, Soong Ju Oh, Aaron T. Fafarman, Benjamin T. Diroll, Christopher B. Murray, Cherie R. Kagan, James M. Kikkawa

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We study gate-controlled, low-temperature resistance and magnetotransport in indium-doped CdSe quantum dot field effect transistors. We show that using the gate to accumulate electrons in the quantum dot channel increases the "localization product" (localization length times dielectric constant) describing transport at the Fermi level, as expected for Fermi level changes near a mobility edge. Our measurements suggest that the localization length increases to significantly greater than the quantum dot diameter.

Original languageEnglish
Pages (from-to)5948-5952
Number of pages5
JournalNano Letters
Volume14
Issue number10
DOIs
Publication statusPublished - 2014 Oct 8
Externally publishedYes

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Keywords

  • cadmium selenide
  • delocalization
  • field-effect transistor
  • magnetoresistance
  • mobility edge
  • Quantum dots

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Turk, M. E., Choi, J. H., Oh, S. J., Fafarman, A. T., Diroll, B. T., Murray, C. B., ... Kikkawa, J. M. (2014). Gate-induced carrier delocalization in quantum dot field effect transistors. Nano Letters, 14(10), 5948-5952. https://doi.org/10.1021/nl5029655