Gate modulation of spin precession in a semiconductor channel

Hyun Cheol Koo, Jae Hyun Kwon, Jonghwa Eom, Joonyeon Chang, Suk Hee Han, Mark Johnson

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Gate control of spin precession is experimentally presented in an InAs quantum well with ferromagnetic spin injector and detector. The gate electric field modulates the spin-orbit interaction and spin precession. As a consequence, spin dependent conductance in the InAs channel is controlled by the gate voltage. Using ballistic spin transport theory, gate modulation results are proved to fit very well with gate voltage dependence of Rashba field strength.

Original languageEnglish
Article number064006
JournalJournal of Physics D: Applied Physics
Volume44
Issue number6
DOIs
Publication statusPublished - 2011 Feb 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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    Koo, H. C., Kwon, J. H., Eom, J., Chang, J., Han, S. H., & Johnson, M. (2011). Gate modulation of spin precession in a semiconductor channel. Journal of Physics D: Applied Physics, 44(6), [064006]. https://doi.org/10.1088/0022-3727/44/6/064006