Gate modulation of spin precession in a semiconductor channel

Hyun Cheol Koo, Jae Hyun Kwon, Jonghwa Eom, Joonyeon Chang, Suk Hee Han, Mark Johnson

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Gate control of spin precession is experimentally presented in an InAs quantum well with ferromagnetic spin injector and detector. The gate electric field modulates the spin-orbit interaction and spin precession. As a consequence, spin dependent conductance in the InAs channel is controlled by the gate voltage. Using ballistic spin transport theory, gate modulation results are proved to fit very well with gate voltage dependence of Rashba field strength.

Original languageEnglish
Article number064006
JournalJournal of Physics D: Applied Physics
Volume44
Issue number6
DOIs
Publication statusPublished - 2011 Feb 16
Externally publishedYes

Fingerprint

precession
Modulation
Semiconductor materials
modulation
Electric potential
Ballistics
Semiconductor quantum wells
Orbits
Electric fields
Detectors
transport theory
electric potential
spin-orbit interactions
injectors
ballistics
field strength
indium arsenide
quantum wells
electric fields
detectors

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Koo, H. C., Kwon, J. H., Eom, J., Chang, J., Han, S. H., & Johnson, M. (2011). Gate modulation of spin precession in a semiconductor channel. Journal of Physics D: Applied Physics, 44(6), [064006]. https://doi.org/10.1088/0022-3727/44/6/064006

Gate modulation of spin precession in a semiconductor channel. / Koo, Hyun Cheol; Kwon, Jae Hyun; Eom, Jonghwa; Chang, Joonyeon; Han, Suk Hee; Johnson, Mark.

In: Journal of Physics D: Applied Physics, Vol. 44, No. 6, 064006, 16.02.2011.

Research output: Contribution to journalArticle

Koo, Hyun Cheol ; Kwon, Jae Hyun ; Eom, Jonghwa ; Chang, Joonyeon ; Han, Suk Hee ; Johnson, Mark. / Gate modulation of spin precession in a semiconductor channel. In: Journal of Physics D: Applied Physics. 2011 ; Vol. 44, No. 6.
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