Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device

Youn Ho Park, Sang Hoon Shin, Jin Dong Song, Joonyeon Chang, Suk Hee Han, Heon Jin Choi, Hyun Cheol Koo

Research output: Contribution to journalArticle

6 Citations (Scopus)


The gate voltage dependence of the Rashba effect in a p-type quantum well was investigated by using Shubnikov-de Haas measurements. The GaSb-based p-type quantum well has a large Rashba spin-orbit interaction parameter of 1.71 × 10-11 eVm for a zero gate voltage and exhibits gate controllability. We also propose a complementary logic device using n- and p-type spin transistors that simultaneously utilize charge and spin currents to improve the signal margin.

Original languageEnglish
Pages (from-to)34-37
Number of pages4
JournalSolid-State Electronics
Publication statusPublished - 2013 Mar 12



  • Complementary device
  • GaSb p-type quantum well
  • Rashba effect
  • Spin transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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