Gated FEAs using directly grown carbon nanotubes by the rapid thermal CVD method

Yoon Taek Jang, Yun-Hi Lee, Chang Hoon Choi, Byeong Kwon Ju, Jin H. Ahn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We fabricate the spindt-type gated FEAs using directly grown CNTs. Their electron emission properties and light-emitting characteristics will be presented. In order to realize better functions of gated FEAs using CNTs directly grown into the submicron-holes, we investigate freestanding CNTs grown on each micron-sized Co dot without disturbing neighboring patterns by Thermal CVD.

Original languageEnglish
Title of host publicationSID Conference Record of the International Display Research Conference
Pages1241-1244
Number of pages4
Publication statusPublished - 2001
Externally publishedYes
EventAsia Display/IDW 2001 - Nagoya, Japan
Duration: 2002 Oct 162002 Oct 19

Other

OtherAsia Display/IDW 2001
CountryJapan
CityNagoya
Period02/10/1602/10/19

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Jang, Y. T., Lee, Y-H., Choi, C. H., Ju, B. K., & Ahn, J. H. (2001). Gated FEAs using directly grown carbon nanotubes by the rapid thermal CVD method. In SID Conference Record of the International Display Research Conference (pp. 1241-1244)