We fabricate the spindt-type gated FEAs using directly grown CNTs. Their electron emission properties and light-emitting characteristics will be presented. In order to realize better functions of gated FEAs using CNTs directly grown into the submicron-holes, we investigate freestanding CNTs grown on each micron-sized Co dot without disturbing neighboring patterns by Thermal CVD.
|Number of pages||4|
|Journal||SID Conference Record of the International Display Research Conference|
|Publication status||Published - 2001|
|Event||Asia Display/IDW 2001 - Nagoya, Japan|
Duration: 2002 Oct 16 → 2002 Oct 19
ASJC Scopus subject areas
- Electrical and Electronic Engineering