Gated FEAs using directly grown carbon nanotubes by the rapid thermal CVD method

Yoon Taek Jang, Yun Hi Lee, Chang Hoon Choi, Byeong Kwon Ju, Jin Ho Ahn

Research output: Contribution to journalConference article

Abstract

We fabricate the spindt-type gated FEAs using directly grown CNTs. Their electron emission properties and light-emitting characteristics will be presented. In order to realize better functions of gated FEAs using CNTs directly grown into the submicron-holes, we investigate freestanding CNTs grown on each micron-sized Co dot without disturbing neighboring patterns by Thermal CVD.

Original languageEnglish
Pages (from-to)1241-1244
Number of pages4
JournalSID Conference Record of the International Display Research Conference
Publication statusPublished - 2001
EventAsia Display/IDW 2001 - Nagoya, Japan
Duration: 2002 Oct 162002 Oct 19

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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