Abstract
We have fabricated the gated field emitter using directly grown carbon nanotubes (CNTs) as an electron emission source. Vertically aligned CNTs were grown at the center of the gate hole using thermal chemical vapor deposition. In order to reduce the leakage current due to flowing current along CNTs grown on the sidewalls of the gate hole, we adopted new process scheme such as sidewall protector. The leakage current of gated CNTs emitter with sidewall protector shows a decrease of 85.8% compared to that of conventional structure.
Original language | English |
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Pages | 37-40 |
Number of pages | 4 |
Publication status | Published - 2003 |
Event | IEEE Sixteenth Annual International Conference on Micro Electro Mechanical Systems - Kyoto, Japan Duration: 2003 Jan 19 → 2003 Jan 23 |
Other
Other | IEEE Sixteenth Annual International Conference on Micro Electro Mechanical Systems |
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Country/Territory | Japan |
City | Kyoto |
Period | 03/1/19 → 03/1/23 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Mechanical Engineering
- Electrical and Electronic Engineering