Gated field emitter using carbon nanotubes for vacuum microelectronic devices

Yoon Taek Jang, Chang Hoon Choi, Byeong Kwon Ju, Jin Ho Ahn, Yun Hi Lee

Research output: Contribution to conferencePaper

4 Citations (Scopus)

Abstract

We have fabricated the gated field emitter using directly grown carbon nanotubes (CNTs) as an electron emission source. Vertically aligned CNTs were grown at the center of the gate hole using thermal chemical vapor deposition. In order to reduce the leakage current due to flowing current along CNTs grown on the sidewalls of the gate hole, we adopted new process scheme such as sidewall protector. The leakage current of gated CNTs emitter with sidewall protector shows a decrease of 85.8% compared to that of conventional structure.

Original languageEnglish
Pages37-40
Number of pages4
Publication statusPublished - 2003
EventIEEE Sixteenth Annual International Conference on Micro Electro Mechanical Systems - Kyoto, Japan
Duration: 2003 Jan 192003 Jan 23

Other

OtherIEEE Sixteenth Annual International Conference on Micro Electro Mechanical Systems
CountryJapan
CityKyoto
Period03/1/1903/1/23

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Jang, Y. T., Choi, C. H., Ju, B. K., Ahn, J. H., & Lee, Y. H. (2003). Gated field emitter using carbon nanotubes for vacuum microelectronic devices. 37-40. Paper presented at IEEE Sixteenth Annual International Conference on Micro Electro Mechanical Systems, Kyoto, Japan.