Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers

J. G. Park, G. T. Kim, V. Krstic, S. H. Lee, B. Kim, S. Roth, M. Burghard, Y. W. Park

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The I-V characteristics of iodine doped polyacetylene (PA) nanofibers were measured as function of temperature. Platinum electrodes on top of SiO2 substrates were used to prevent reaction with iodine dopant. The distance between the two electrodes is approximately 100 nm. Upon iodine doping, non-ohmic I-V characteristics are observed. The gate dependence shows the charge carrier to be hole with a mobility μFET ∼ 4.4×10-5 cm2/Vs at 233K.

Original languageEnglish
Pages (from-to)469-470
Number of pages2
JournalSynthetic Metals
Volume119
Issue number1-3
DOIs
Publication statusPublished - 2001 Mar 15

Keywords

  • Electrical transport
  • FET
  • Nanofiber
  • Polyacetylene

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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    Park, J. G., Kim, G. T., Krstic, V., Lee, S. H., Kim, B., Roth, S., Burghard, M., & Park, Y. W. (2001). Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers. Synthetic Metals, 119(1-3), 469-470. https://doi.org/10.1016/S0379-6779(00)00744-X