Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers

J. G. Park, Gyu-Tae Kim, V. Krstic, S. H. Lee, B. Kim, S. Roth, M. Burghard, Y. W. Park

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The I-V characteristics of iodine doped polyacetylene (PA) nanofibers were measured as function of temperature. Platinum electrodes on top of SiO2 substrates were used to prevent reaction with iodine dopant. The distance between the two electrodes is approximately 100 nm. Upon iodine doping, non-ohmic I-V characteristics are observed. The gate dependence shows the charge carrier to be hole with a mobility μFET ∼ 4.4×10-5 cm2/Vs at 233K.

Original languageEnglish
Pages (from-to)469-470
Number of pages2
JournalSynthetic Metals
Volume119
Issue number1-3
DOIs
Publication statusPublished - 2001 Mar 15
Externally publishedYes

Fingerprint

Polyacetylenes
polyacetylene
Nanofibers
Iodine
iodine
Doping (additives)
Electrodes
electrodes
Field effect transistors
Platinum
Charge carriers
charge carriers
platinum
field effect transistors
Substrates
Temperature
temperature

Keywords

  • Electrical transport
  • FET
  • Nanofiber
  • Polyacetylene

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Polymers and Plastics

Cite this

Park, J. G., Kim, G-T., Krstic, V., Lee, S. H., Kim, B., Roth, S., ... Park, Y. W. (2001). Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers. Synthetic Metals, 119(1-3), 469-470. https://doi.org/10.1016/S0379-6779(00)00744-X

Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers. / Park, J. G.; Kim, Gyu-Tae; Krstic, V.; Lee, S. H.; Kim, B.; Roth, S.; Burghard, M.; Park, Y. W.

In: Synthetic Metals, Vol. 119, No. 1-3, 15.03.2001, p. 469-470.

Research output: Contribution to journalArticle

Park, JG, Kim, G-T, Krstic, V, Lee, SH, Kim, B, Roth, S, Burghard, M & Park, YW 2001, 'Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers', Synthetic Metals, vol. 119, no. 1-3, pp. 469-470. https://doi.org/10.1016/S0379-6779(00)00744-X
Park, J. G. ; Kim, Gyu-Tae ; Krstic, V. ; Lee, S. H. ; Kim, B. ; Roth, S. ; Burghard, M. ; Park, Y. W. / Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers. In: Synthetic Metals. 2001 ; Vol. 119, No. 1-3. pp. 469-470.
@article{383b75139c054082af0ab6d655eaaf7c,
title = "Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers",
abstract = "The I-V characteristics of iodine doped polyacetylene (PA) nanofibers were measured as function of temperature. Platinum electrodes on top of SiO2 substrates were used to prevent reaction with iodine dopant. The distance between the two electrodes is approximately 100 nm. Upon iodine doping, non-ohmic I-V characteristics are observed. The gate dependence shows the charge carrier to be hole with a mobility μFET ∼ 4.4×10-5 cm2/Vs at 233K.",
keywords = "Electrical transport, FET, Nanofiber, Polyacetylene",
author = "Park, {J. G.} and Gyu-Tae Kim and V. Krstic and Lee, {S. H.} and B. Kim and S. Roth and M. Burghard and Park, {Y. W.}",
year = "2001",
month = "3",
day = "15",
doi = "10.1016/S0379-6779(00)00744-X",
language = "English",
volume = "119",
pages = "469--470",
journal = "Synthetic Metals",
issn = "0379-6779",
publisher = "Elsevier BV",
number = "1-3",

}

TY - JOUR

T1 - Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers

AU - Park, J. G.

AU - Kim, Gyu-Tae

AU - Krstic, V.

AU - Lee, S. H.

AU - Kim, B.

AU - Roth, S.

AU - Burghard, M.

AU - Park, Y. W.

PY - 2001/3/15

Y1 - 2001/3/15

N2 - The I-V characteristics of iodine doped polyacetylene (PA) nanofibers were measured as function of temperature. Platinum electrodes on top of SiO2 substrates were used to prevent reaction with iodine dopant. The distance between the two electrodes is approximately 100 nm. Upon iodine doping, non-ohmic I-V characteristics are observed. The gate dependence shows the charge carrier to be hole with a mobility μFET ∼ 4.4×10-5 cm2/Vs at 233K.

AB - The I-V characteristics of iodine doped polyacetylene (PA) nanofibers were measured as function of temperature. Platinum electrodes on top of SiO2 substrates were used to prevent reaction with iodine dopant. The distance between the two electrodes is approximately 100 nm. Upon iodine doping, non-ohmic I-V characteristics are observed. The gate dependence shows the charge carrier to be hole with a mobility μFET ∼ 4.4×10-5 cm2/Vs at 233K.

KW - Electrical transport

KW - FET

KW - Nanofiber

KW - Polyacetylene

UR - http://www.scopus.com/inward/record.url?scp=0035867463&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035867463&partnerID=8YFLogxK

U2 - 10.1016/S0379-6779(00)00744-X

DO - 10.1016/S0379-6779(00)00744-X

M3 - Article

AN - SCOPUS:0035867463

VL - 119

SP - 469

EP - 470

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 1-3

ER -