GaZnO as a transparent electrode to silicon carbide

Jung Ho Lee, Ji Hong Kim, Kang Min Do, Byung Moo Moon, Sung Jae Joo, Wook Bahng, Sang Cheol Kim, Nam Kyun Kim, Sang Mo Koo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (TS∼250 to 550°C) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 °C, whereas the lowest resistivity (∼3.3 × 10 -4 Ωcm) and highest carrier concentration (∼1. 33×1021cm-3) values are observed for the GaZnO films deposited at 400 °C. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ ions may affect the electrical properties of GaZnO films on SiC.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
EditorsRobert P. Devaty, Michael Dudley, T. Paul Chow, Philip G. Neudeck
PublisherTrans Tech Publications Ltd
Pages849-852
Number of pages4
ISBN (Print)9783037854198
DOIs
Publication statusPublished - 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: 2011 Sep 112011 Sep 16

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period11/9/1111/9/16

Keywords

  • GaZnO
  • SiC
  • Transparent electrode

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Lee, J. H., Kim, J. H., Do, K. M., Moon, B. M., Joo, S. J., Bahng, W., Kim, S. C., Kim, N. K., & Koo, S. M. (2012). GaZnO as a transparent electrode to silicon carbide. In R. P. Devaty, M. Dudley, T. P. Chow, & P. G. Neudeck (Eds.), Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 849-852). (Materials Science Forum; Vol. 717-720). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.717-720.849