GaZnO as a transparent electrode to silicon carbide

Jung Ho Lee, Ji Hong Kim, Kang Min Do, Byung-Moo Moon, Sung Jae Joo, Wook Bahng, Sang Cheol Kim, Nam Kyun Kim, Sang Mo Koo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (T S∼250 to 550°C) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 °C, whereas the lowest resistivity (∼3.3 × 10 -4 Ωcm) and highest carrier concentration (∼1. 33×10 21cm -3) values are observed for the GaZnO films deposited at 400 °C. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga 3+ ions may affect the electrical properties of GaZnO films on SiC.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages849-852
Number of pages4
Volume717-720
DOIs
Publication statusPublished - 2012 May 28
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: 2011 Sep 112011 Sep 16

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)02555476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period11/9/1111/9/16

Fingerprint

Zinc Oxide
Zinc oxide
Silicon carbide
silicon carbides
zinc oxides
Oxide films
Electrodes
electrodes
oxide films
Electric properties
electrical properties
Thin films
Hall mobility
Hall effect
Substrates
Auger electron spectroscopy
thin films
Auger spectroscopy
Carrier concentration
electron spectroscopy

Keywords

  • GaZnO
  • SiC
  • Transparent electrode

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Lee, J. H., Kim, J. H., Do, K. M., Moon, B-M., Joo, S. J., Bahng, W., ... Koo, S. M. (2012). GaZnO as a transparent electrode to silicon carbide. In Materials Science Forum (Vol. 717-720, pp. 849-852). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.849

GaZnO as a transparent electrode to silicon carbide. / Lee, Jung Ho; Kim, Ji Hong; Do, Kang Min; Moon, Byung-Moo; Joo, Sung Jae; Bahng, Wook; Kim, Sang Cheol; Kim, Nam Kyun; Koo, Sang Mo.

Materials Science Forum. Vol. 717-720 2012. p. 849-852 (Materials Science Forum; Vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, JH, Kim, JH, Do, KM, Moon, B-M, Joo, SJ, Bahng, W, Kim, SC, Kim, NK & Koo, SM 2012, GaZnO as a transparent electrode to silicon carbide. in Materials Science Forum. vol. 717-720, Materials Science Forum, vol. 717-720, pp. 849-852, 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011, Cleveland, OH, United States, 11/9/11. https://doi.org/10.4028/www.scientific.net/MSF.717-720.849
Lee JH, Kim JH, Do KM, Moon B-M, Joo SJ, Bahng W et al. GaZnO as a transparent electrode to silicon carbide. In Materials Science Forum. Vol. 717-720. 2012. p. 849-852. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.717-720.849
Lee, Jung Ho ; Kim, Ji Hong ; Do, Kang Min ; Moon, Byung-Moo ; Joo, Sung Jae ; Bahng, Wook ; Kim, Sang Cheol ; Kim, Nam Kyun ; Koo, Sang Mo. / GaZnO as a transparent electrode to silicon carbide. Materials Science Forum. Vol. 717-720 2012. pp. 849-852 (Materials Science Forum).
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