Geometry and interface structure of island nuclei for GaSb buffer layers grown on (001) GaAs by metalorganic vapour phase epitaxy

M. Aindow, T. T. Cheng, N. J. Mason, Tae Yeon Seong, P. J. Walker

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Atomic force microscopy and transmission electron microscopy have been used to investigate the geometry and interface structure of island nuclei formed in the initial stages of buffer layer growth for MOVPE GaSb on (001) GaAs. There is a bimodal distribution of island sizes with a high density of small, homogeneous nuclei and a lower density of larger, secondary nuclei. The smaller islands have pronounced crystallographic facets which are consistent with those which would be expected for minimization of surface energy and lateral growth anisotropy. The secondary islands are present at junctions between primary nuclei and may have formed due to enhancement of growth rates at emergent threading segments of misfit dislocations. The lattice misfit is accommodated by a regular square arrangement of edge-type misfit dislocations but unusual strain contrast arises in HREM images due to either a "stand-off" of dislocations from the interface or a corrugated interface.

Original languageEnglish
Pages (from-to)168-174
Number of pages7
JournalJournal of Crystal Growth
Volume133
Issue number1-2
Publication statusPublished - 1993 Oct 1
Externally publishedYes

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Metallorganic vapor phase epitaxy
Buffer layers
Dislocations (crystals)
vapor phase epitaxy
buffers
nuclei
Geometry
High resolution electron microscopy
geometry
Interfacial energy
Crystal lattices
Atomic force microscopy
Anisotropy
Transmission electron microscopy
surface energy
flat surfaces
atomic force microscopy
transmission electron microscopy
anisotropy
optimization

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Geometry and interface structure of island nuclei for GaSb buffer layers grown on (001) GaAs by metalorganic vapour phase epitaxy. / Aindow, M.; Cheng, T. T.; Mason, N. J.; Seong, Tae Yeon; Walker, P. J.

In: Journal of Crystal Growth, Vol. 133, No. 1-2, 01.10.1993, p. 168-174.

Research output: Contribution to journalArticle

@article{ed86d5be824f4589a933eff60b4373df,
title = "Geometry and interface structure of island nuclei for GaSb buffer layers grown on (001) GaAs by metalorganic vapour phase epitaxy",
abstract = "Atomic force microscopy and transmission electron microscopy have been used to investigate the geometry and interface structure of island nuclei formed in the initial stages of buffer layer growth for MOVPE GaSb on (001) GaAs. There is a bimodal distribution of island sizes with a high density of small, homogeneous nuclei and a lower density of larger, secondary nuclei. The smaller islands have pronounced crystallographic facets which are consistent with those which would be expected for minimization of surface energy and lateral growth anisotropy. The secondary islands are present at junctions between primary nuclei and may have formed due to enhancement of growth rates at emergent threading segments of misfit dislocations. The lattice misfit is accommodated by a regular square arrangement of edge-type misfit dislocations but unusual strain contrast arises in HREM images due to either a {"}stand-off{"} of dislocations from the interface or a corrugated interface.",
author = "M. Aindow and Cheng, {T. T.} and Mason, {N. J.} and Seong, {Tae Yeon} and Walker, {P. J.}",
year = "1993",
month = "10",
day = "1",
language = "English",
volume = "133",
pages = "168--174",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Geometry and interface structure of island nuclei for GaSb buffer layers grown on (001) GaAs by metalorganic vapour phase epitaxy

AU - Aindow, M.

AU - Cheng, T. T.

AU - Mason, N. J.

AU - Seong, Tae Yeon

AU - Walker, P. J.

PY - 1993/10/1

Y1 - 1993/10/1

N2 - Atomic force microscopy and transmission electron microscopy have been used to investigate the geometry and interface structure of island nuclei formed in the initial stages of buffer layer growth for MOVPE GaSb on (001) GaAs. There is a bimodal distribution of island sizes with a high density of small, homogeneous nuclei and a lower density of larger, secondary nuclei. The smaller islands have pronounced crystallographic facets which are consistent with those which would be expected for minimization of surface energy and lateral growth anisotropy. The secondary islands are present at junctions between primary nuclei and may have formed due to enhancement of growth rates at emergent threading segments of misfit dislocations. The lattice misfit is accommodated by a regular square arrangement of edge-type misfit dislocations but unusual strain contrast arises in HREM images due to either a "stand-off" of dislocations from the interface or a corrugated interface.

AB - Atomic force microscopy and transmission electron microscopy have been used to investigate the geometry and interface structure of island nuclei formed in the initial stages of buffer layer growth for MOVPE GaSb on (001) GaAs. There is a bimodal distribution of island sizes with a high density of small, homogeneous nuclei and a lower density of larger, secondary nuclei. The smaller islands have pronounced crystallographic facets which are consistent with those which would be expected for minimization of surface energy and lateral growth anisotropy. The secondary islands are present at junctions between primary nuclei and may have formed due to enhancement of growth rates at emergent threading segments of misfit dislocations. The lattice misfit is accommodated by a regular square arrangement of edge-type misfit dislocations but unusual strain contrast arises in HREM images due to either a "stand-off" of dislocations from the interface or a corrugated interface.

UR - http://www.scopus.com/inward/record.url?scp=0027683931&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027683931&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0027683931

VL - 133

SP - 168

EP - 174

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-2

ER -