Germanium for high performance MOSFETs and optical interconnects

Krishna C. Saraswat, Donghyun Kim, Tejas Krishnamohan, Duygii Kuzum, Ali K. Okyay, Abhijit Pethe, Hyun-Yong Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

It is believed that to continue the scaling of silicon CMOS innovative device structures and new materials have to be created in order to continue the historic progress in information processing and transmission. Recently germanium has emerged as a viable candidate to augment Si for CMOS and optoelectronic applications. In this work we will first review recent results on growth of thin and thick films of Ge on Si, technology for appropriate cleaning of Ge, surface passivation using high-κ dielectrics, and metal induced crystallization of amorphous Ge and dopant activation. Next we will review application of Ge for high performance MOSFETs. Innovative Si/Ge MOS heterostructures will be described with high on current and low off currents. Finally we will describe optical detectors and modulators for on-chip and off-chip interconnect. Successful integration of Ge on Si should allow continued scaling of silicon CMOS to below 22 nm node.

Original languageEnglish
Title of host publicationECS Transactions
Pages3-12
Number of pages10
Volume16
Edition10
DOIs
Publication statusPublished - 2008 Dec 1
Externally publishedYes
Event3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 122008 Oct 17

Other

Other3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1208/10/17

Fingerprint

Optical interconnects
Germanium
Silicon
Thick films
Passivation
Optoelectronic devices
Modulators
Heterojunctions
Cleaning
Crystallization
Chemical activation
Doping (additives)
Detectors
Thin films
Metals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Saraswat, K. C., Kim, D., Krishnamohan, T., Kuzum, D., Okyay, A. K., Pethe, A., & Yu, H-Y. (2008). Germanium for high performance MOSFETs and optical interconnects. In ECS Transactions (10 ed., Vol. 16, pp. 3-12) https://doi.org/10.1149/1.2986748

Germanium for high performance MOSFETs and optical interconnects. / Saraswat, Krishna C.; Kim, Donghyun; Krishnamohan, Tejas; Kuzum, Duygii; Okyay, Ali K.; Pethe, Abhijit; Yu, Hyun-Yong.

ECS Transactions. Vol. 16 10. ed. 2008. p. 3-12.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Saraswat, KC, Kim, D, Krishnamohan, T, Kuzum, D, Okyay, AK, Pethe, A & Yu, H-Y 2008, Germanium for high performance MOSFETs and optical interconnects. in ECS Transactions. 10 edn, vol. 16, pp. 3-12, 3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting, Honolulu, HI, United States, 08/10/12. https://doi.org/10.1149/1.2986748
Saraswat KC, Kim D, Krishnamohan T, Kuzum D, Okyay AK, Pethe A et al. Germanium for high performance MOSFETs and optical interconnects. In ECS Transactions. 10 ed. Vol. 16. 2008. p. 3-12 https://doi.org/10.1149/1.2986748
Saraswat, Krishna C. ; Kim, Donghyun ; Krishnamohan, Tejas ; Kuzum, Duygii ; Okyay, Ali K. ; Pethe, Abhijit ; Yu, Hyun-Yong. / Germanium for high performance MOSFETs and optical interconnects. ECS Transactions. Vol. 16 10. ed. 2008. pp. 3-12
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