Germanium in situ doped epitaxial growth on Si for high-performance n+/p-junction diode

Hyun-Yong Yu, Szu Lin Cheng, Peter B. Griffin, Yoshio Nishi, Krishna C. Saraswat

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

We demonstrate an abrupt and box-shaped n+/p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using in situ doping during epitaxial growth. The temperature dependence of dopant activation was investigated associated with the shallower and abrupt junction formation. In addition, we have fabricated high-performance Ge n+/p-junction diodes at 400 °C-600 °C, based on the In Situ doping technique. Excellent diode characteristics having a 1.1 × 104 on/off ratio and a high forward current density (120 A/cm2 at 1 V) are obtained in an n+/p diode at 600-°C in situ doping.

Original languageEnglish
Pages (from-to)1002-1004
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number9
DOIs
Publication statusPublished - 2009 Aug 7
Externally publishedYes

Fingerprint

Germanium
Epitaxial growth
Diodes
Doping (additives)
Chemical activation
Phosphorus
Current density

Keywords

  • Doping
  • Germanium
  • In situ
  • Phosphorus
  • Shallow

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Germanium in situ doped epitaxial growth on Si for high-performance n+/p-junction diode. / Yu, Hyun-Yong; Cheng, Szu Lin; Griffin, Peter B.; Nishi, Yoshio; Saraswat, Krishna C.

In: IEEE Electron Device Letters, Vol. 30, No. 9, 07.08.2009, p. 1002-1004.

Research output: Contribution to journalArticle

Yu, Hyun-Yong ; Cheng, Szu Lin ; Griffin, Peter B. ; Nishi, Yoshio ; Saraswat, Krishna C. / Germanium in situ doped epitaxial growth on Si for high-performance n+/p-junction diode. In: IEEE Electron Device Letters. 2009 ; Vol. 30, No. 9. pp. 1002-1004.
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