Germanium in situ doped epitaxial growth on Si for high-performance n+/p-junction diode

Hyun Yong Yu, Szu Lin Cheng, Peter B. Griffin, Yoshio Nishi, Krishna C. Saraswat

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)


We demonstrate an abrupt and box-shaped n+/p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using in situ doping during epitaxial growth. The temperature dependence of dopant activation was investigated associated with the shallower and abrupt junction formation. In addition, we have fabricated high-performance Ge n+/p-junction diodes at 400 °C-600 °C, based on the In Situ doping technique. Excellent diode characteristics having a 1.1 × 104 on/off ratio and a high forward current density (120 A/cm2 at 1 V) are obtained in an n+/p diode at 600-°C in situ doping.

Original languageEnglish
Pages (from-to)1002-1004
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
Publication statusPublished - 2009
Externally publishedYes


  • Doping
  • Germanium
  • In situ
  • Phosphorus
  • Shallow

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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