Germanium p-i-n avalanche photodetector fabricated by point defect healing process

Jaewoo Shim, Dong Ho Kang, Gwangwe Yoo, Seong Taek Hong, Woo Shik Jung, Bong Jin Kuh, Beomsuk Lee, Dongjae Shin, Kyoungho Ha, Gwang Sik Kim, Hyun-Yong Yu, Jungwoo Baek, Jin Hong Park

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4 Citations (Scopus)

Abstract

In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below VR = 5 V), low operating voltage (avalanche breakdown voltage = 8-13 V), and high multiplication gain (440-680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ∼1017 cm-3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.

Original languageEnglish
Pages (from-to)4204-4207
Number of pages4
JournalOptics Letters
Volume39
Issue number14
DOIs
Publication statusPublished - 2014 Jul 15

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Shim, J., Kang, D. H., Yoo, G., Hong, S. T., Jung, W. S., Kuh, B. J., Lee, B., Shin, D., Ha, K., Kim, G. S., Yu, H-Y., Baek, J., & Park, J. H. (2014). Germanium p-i-n avalanche photodetector fabricated by point defect healing process. Optics Letters, 39(14), 4204-4207. https://doi.org/10.1364/OL.39.004204