Abstract
In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below VR = 5 V), low operating voltage (avalanche breakdown voltage = 8-13 V), and high multiplication gain (440-680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ∼1017 cm-3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.
| Original language | English |
|---|---|
| Pages (from-to) | 4204-4207 |
| Number of pages | 4 |
| Journal | Optics Letters |
| Volume | 39 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2014 Jul 15 |
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ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
Cite this
Germanium p-i-n avalanche photodetector fabricated by point defect healing process. / Shim, Jaewoo; Kang, Dong Ho; Yoo, Gwangwe; Hong, Seong Taek; Jung, Woo Shik; Kuh, Bong Jin; Lee, Beomsuk; Shin, Dongjae; Ha, Kyoungho; Kim, Gwang Sik; Yu, Hyun-Yong; Baek, Jungwoo; Park, Jin Hong.
In: Optics Letters, Vol. 39, No. 14, 15.07.2014, p. 4204-4207.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Germanium p-i-n avalanche photodetector fabricated by point defect healing process
AU - Shim, Jaewoo
AU - Kang, Dong Ho
AU - Yoo, Gwangwe
AU - Hong, Seong Taek
AU - Jung, Woo Shik
AU - Kuh, Bong Jin
AU - Lee, Beomsuk
AU - Shin, Dongjae
AU - Ha, Kyoungho
AU - Kim, Gwang Sik
AU - Yu, Hyun-Yong
AU - Baek, Jungwoo
AU - Park, Jin Hong
PY - 2014/7/15
Y1 - 2014/7/15
N2 - In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below VR = 5 V), low operating voltage (avalanche breakdown voltage = 8-13 V), and high multiplication gain (440-680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ∼1017 cm-3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.
AB - In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below VR = 5 V), low operating voltage (avalanche breakdown voltage = 8-13 V), and high multiplication gain (440-680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ∼1017 cm-3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.
UR - http://www.scopus.com/inward/record.url?scp=84904512036&partnerID=8YFLogxK
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U2 - 10.1364/OL.39.004204
DO - 10.1364/OL.39.004204
M3 - Article
AN - SCOPUS:84904512036
VL - 39
SP - 4204
EP - 4207
JO - Optics Letters
JF - Optics Letters
SN - 0146-9592
IS - 14
ER -