Germanium p-i-n avalanche photodetector fabricated by point defect healing process

Jaewoo Shim; Dong Ho Kang; Gwangwe Yoo; Seong Taek Hong; Woo Shik Jung; Bong Jin Kuh; Beomsuk Lee; Dongjae Shin; Kyoungho Ha; Gwang Sik Kim; Hyun Yong Yu; Jungwoo Baek; Jin Hong Park

doi:10.1364/OL.39.004204

Germanium p-i-n avalanche photodetector fabricated by point defect healing process

Jaewoo Shim, Dong Ho Kang, Gwangwe Yoo, Seong Taek Hong, Woo Shik Jung, Bong Jin Kuh, Beomsuk Lee, Dongjae Shin, Kyoungho Ha, Gwang Sik Kim, Hyun Yong Yu, Jungwoo Baek, Jin Hong Park

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below V_R = 5 V), low operating voltage (avalanche breakdown voltage = 8-13 V), and high multiplication gain (440-680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ∼10¹⁷ cm^-3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.

Original language	English
Pages (from-to)	4204-4207
Number of pages	4
Journal	Optics Letters
Volume	39
Issue number	14
DOIs	https://doi.org/10.1364/OL.39.004204
Publication status	Published - 2014 Jul 15

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OL.39.004204

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title = "Germanium p-i-n avalanche photodetector fabricated by point defect healing process",

abstract = "In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below VR = 5 V), low operating voltage (avalanche breakdown voltage = 8-13 V), and high multiplication gain (440-680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ∼1017 cm-3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.",

author = "Jaewoo Shim and Kang, {Dong Ho} and Gwangwe Yoo and Hong, {Seong Taek} and Jung, {Woo Shik} and Kuh, {Bong Jin} and Beomsuk Lee and Dongjae Shin and Kyoungho Ha and Kim, {Gwang Sik} and Yu, {Hyun Yong} and Jungwoo Baek and Park, {Jin Hong}",

year = "2014",

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day = "15",

doi = "10.1364/OL.39.004204",

language = "English",

volume = "39",

pages = "4204--4207",

journal = "Optics Letters",

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publisher = "The Optical Society",

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TY - JOUR

T1 - Germanium p-i-n avalanche photodetector fabricated by point defect healing process

AU - Shim, Jaewoo

AU - Kang, Dong Ho

AU - Yoo, Gwangwe

AU - Hong, Seong Taek

AU - Jung, Woo Shik

AU - Kuh, Bong Jin

AU - Lee, Beomsuk

AU - Shin, Dongjae

AU - Ha, Kyoungho

AU - Kim, Gwang Sik

AU - Yu, Hyun Yong

AU - Baek, Jungwoo

AU - Park, Jin Hong

PY - 2014/7/15

Y1 - 2014/7/15

N2 - In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below VR = 5 V), low operating voltage (avalanche breakdown voltage = 8-13 V), and high multiplication gain (440-680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ∼1017 cm-3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.

AB - In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below VR = 5 V), low operating voltage (avalanche breakdown voltage = 8-13 V), and high multiplication gain (440-680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ∼1017 cm-3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.

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U2 - 10.1364/OL.39.004204

DO - 10.1364/OL.39.004204

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EP - 4207

JO - Optics Letters

JF - Optics Letters

SN - 0146-9592

IS - 14

ER -

Germanium p-i-n avalanche photodetector fabricated by point defect healing process

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