Giant electroresistive ferroelectric diode on 2DEG

Shin Ik Kim, Hyo Jin Gwon, Dai Hong Kim, Seong Keun Kim, Ji Won Choi, Seok Jin Yoon, Hye Jung Chang, Chong-Yun Kang, Beomjin Kwon, Chung Wung Bark, Seong Hyeon Hong, Jin Sang Kim, Seung Hyub Baek

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6 Citations (Scopus)

Abstract

Manipulation of electrons in a solid through transmitting, storing, and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal. Here, we demonstrate a giant electroresistive ferroelectric diode integrating a ferroelectric capacitor into two-dimensional electron gas (2DEG) at oxide interface. As a model system, we fabricate an epitaxial Au/Pb(Zr<inf>0.2</inf>Ti<inf>0.8</inf>)O<inf>3</inf>/LaAlO<inf>3</inf>/SrTiO<inf>3</inf> heterostructure, where 2DEG is formed at LaAlO<inf>3</inf>/SrTiO<inf>3</inf> interface. This device functions as a two-terminal, non-volatile memory of 1 diode-1 resistor with a large I<inf>+</inf>/I<inf>-</inf> ratio (>10<sup>8</sup> at ±6 V) and I<inf>on</inf>/I<inf>off</inf> ratio (>10<sup>7</sup>). This is attributed to not only Schottky barrier modulation at metal/ferroelectric interface by polarization reversal but also the field-effect metalinsulator transition of 2DEG. Moreover, using this heterostructure, we can demonstrate a memristive behavior for an artificial synapse memory, where the resistance can be continuously tuned by partial polarization switching, and the electrons are only unidirectionally transmitted. Beyond non-volatile memory and logic devices, our results will provide new opportunities to emerging electronic devices such as multifunctional nanoelectronics and neuromorphic electronics.

Original languageEnglish
Article number10548
JournalScientific Reports
Volume5
DOIs
Publication statusPublished - 2015 May 27

ASJC Scopus subject areas

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    Kim, S. I., Jin Gwon, H., Kim, D. H., Keun Kim, S., Choi, J. W., Yoon, S. J., Jung Chang, H., Kang, C-Y., Kwon, B., Bark, C. W., Hong, S. H., Kim, J. S., & Baek, S. H. (2015). Giant electroresistive ferroelectric diode on 2DEG. Scientific Reports, 5, [10548]. https://doi.org/10.1038/srep10548