Giant magnetoresistance and long-range antiferromagnetic interlayer exchange coupling in (Ga,Mn)As/GaAs: Be multilayers

Sunjae Chung, Sang Hoon Lee, Jaiho Chung, Taehee Yoo, Hakjoon Lee, B. Kirby, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

We report the observation of the giant magnetoresistance effect in semiconductor-based GaMnAs/GaAs:Be multilayers. Clear transitions between low-field-high-resistance and high-field-low-resistance states are observed in selected samples with Be-doped nonmagnetic spacers. These samples also show negative coercive fields in their magnetic hysteresis and antiferromagnetic (AFM) splittings in polarized neutron reflectivity. Our data indicate that the AFM interlayer exchange couplings in this system occur over much longer periods than predicted by current theories, strongly suggesting that the coupling in III-V semiconductor-based magnetic multilayers is significantly longer ranged than in metallic systems.

Original languageEnglish
Article number054420
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume82
Issue number5
DOIs
Publication statusPublished - 2010 Aug 13

Fingerprint

Magnetic multilayers
Giant magnetoresistance
Magnetic hysteresis
Exchange coupling
interlayers
Multilayers
Neutrons
Semiconductor materials
low resistance
high resistance
spacers
hysteresis
reflectance
neutrons
III-V semiconductors
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Giant magnetoresistance and long-range antiferromagnetic interlayer exchange coupling in (Ga,Mn)As/GaAs : Be multilayers. / Chung, Sunjae; Lee, Sang Hoon; Chung, Jaiho; Yoo, Taehee; Lee, Hakjoon; Kirby, B.; Liu, X.; Furdyna, J. K.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 82, No. 5, 054420, 13.08.2010.

Research output: Contribution to journalArticle

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