Grain-boundary conduction in gadolinia-doped ceria: The effect of SrO addition

Pyeong Seok Cho, Yoon Ho Cho, Seung Young Park, Sung Bo Lee, Doh Yeon Kim, Hyun Min Park, Graeme Auchterlonie, John Drennan, Jong Heun Lee

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Abstract

This study examined the effect of adding SrO on the grain-boundary conduction of Ce0.9 Gd0.1 O1.95 (gadolinia-doped ceria) containing 500 ppm Si O2. The apparent grain-boundary resistivity at 300°C decreased drastically from 746.7 to 0.90-1.97 k cm upon doping with 1 mol % SrO, while the grain-interior resistivity increased gradually from 3.1 to 11.6 k cm as the SrO concentration was increased up to 5 mol %. Therefore, doping with 1 mol % SrO resulted in the minimum total resistivity. The electron probe X-ray microanalysis and the analysis of the lattice parameters suggest that the 140-500-fold enhancement in the grain-boundary conduction is attributed to the scavenging of the highly resistive siliceous phase by the SrO-containing phase.

Original languageEnglish
Pages (from-to)B339-B344
JournalJournal of the Electrochemical Society
Volume156
Issue number3
DOIs
Publication statusPublished - 2009 Feb 9

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Cho, P. S., Cho, Y. H., Park, S. Y., Lee, S. B., Kim, D. Y., Park, H. M., Auchterlonie, G., Drennan, J., & Lee, J. H. (2009). Grain-boundary conduction in gadolinia-doped ceria: The effect of SrO addition. Journal of the Electrochemical Society, 156(3), B339-B344. https://doi.org/10.1149/1.3046153