Grain growth behavior in a columnar-grain-structured silicon wafer for photovoltaic application

Ye Neug Lee, Jin Seok Lee, Bo Yun Jang, Joon Soo Kim, Young Soo Ahn, Wooyoung Yoon

Research output: Contribution to journalArticle

Abstract

With direct growth technologies for obtaining ribbon-type silicon (Si) wafers from molten Si, the horizontal growth process is much faster than the vertical one in terms of the growth rate of the wafer. However, such a fast growth rate is likely to create grains of a relatively small size in the Si wafer, resulting in limited efficiency caused by grain boundary recombination. In this regard, controlling the grain growth behavior of the Si wafer with processing parameters such as the temperature of the substrate and its moving speed is very important in the horizontal growth process. The present investigation produced the experimental findings concerning the processing parameters for controlling the grain size. The size of the grains on the surface of the Si wafer increased to around 180 μm at a lower substrate temperature and a slower the moving speed of the substrate due to the increasing thickness of the Si wafer. However, the growth rate of the grains was observed to have little relation to the variations in the wafer thickness resulting from the processing parameters unless the nucleation behavior had been controlled.

Original languageEnglish
Pages (from-to)190-195
Number of pages6
JournalJournal of the Korean Physical Society
Volume65
Issue number2
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

wafers
silicon
ribbons
grain boundaries
grain size
nucleation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Grain growth behavior in a columnar-grain-structured silicon wafer for photovoltaic application. / Lee, Ye Neug; Lee, Jin Seok; Jang, Bo Yun; Kim, Joon Soo; Ahn, Young Soo; Yoon, Wooyoung.

In: Journal of the Korean Physical Society, Vol. 65, No. 2, 01.01.2014, p. 190-195.

Research output: Contribution to journalArticle

Lee, Ye Neug ; Lee, Jin Seok ; Jang, Bo Yun ; Kim, Joon Soo ; Ahn, Young Soo ; Yoon, Wooyoung. / Grain growth behavior in a columnar-grain-structured silicon wafer for photovoltaic application. In: Journal of the Korean Physical Society. 2014 ; Vol. 65, No. 2. pp. 190-195.
@article{e94258fe585242998a2e8d412edb218e,
title = "Grain growth behavior in a columnar-grain-structured silicon wafer for photovoltaic application",
abstract = "With direct growth technologies for obtaining ribbon-type silicon (Si) wafers from molten Si, the horizontal growth process is much faster than the vertical one in terms of the growth rate of the wafer. However, such a fast growth rate is likely to create grains of a relatively small size in the Si wafer, resulting in limited efficiency caused by grain boundary recombination. In this regard, controlling the grain growth behavior of the Si wafer with processing parameters such as the temperature of the substrate and its moving speed is very important in the horizontal growth process. The present investigation produced the experimental findings concerning the processing parameters for controlling the grain size. The size of the grains on the surface of the Si wafer increased to around 180 μm at a lower substrate temperature and a slower the moving speed of the substrate due to the increasing thickness of the Si wafer. However, the growth rate of the grains was observed to have little relation to the variations in the wafer thickness resulting from the processing parameters unless the nucleation behavior had been controlled.",
keywords = "Growth, Nucleation, Photovoltaic, Silicon, Wafer",
author = "Lee, {Ye Neug} and Lee, {Jin Seok} and Jang, {Bo Yun} and Kim, {Joon Soo} and Ahn, {Young Soo} and Wooyoung Yoon",
year = "2014",
month = "1",
day = "1",
doi = "10.3938/jkps.65.190",
language = "English",
volume = "65",
pages = "190--195",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "2",

}

TY - JOUR

T1 - Grain growth behavior in a columnar-grain-structured silicon wafer for photovoltaic application

AU - Lee, Ye Neug

AU - Lee, Jin Seok

AU - Jang, Bo Yun

AU - Kim, Joon Soo

AU - Ahn, Young Soo

AU - Yoon, Wooyoung

PY - 2014/1/1

Y1 - 2014/1/1

N2 - With direct growth technologies for obtaining ribbon-type silicon (Si) wafers from molten Si, the horizontal growth process is much faster than the vertical one in terms of the growth rate of the wafer. However, such a fast growth rate is likely to create grains of a relatively small size in the Si wafer, resulting in limited efficiency caused by grain boundary recombination. In this regard, controlling the grain growth behavior of the Si wafer with processing parameters such as the temperature of the substrate and its moving speed is very important in the horizontal growth process. The present investigation produced the experimental findings concerning the processing parameters for controlling the grain size. The size of the grains on the surface of the Si wafer increased to around 180 μm at a lower substrate temperature and a slower the moving speed of the substrate due to the increasing thickness of the Si wafer. However, the growth rate of the grains was observed to have little relation to the variations in the wafer thickness resulting from the processing parameters unless the nucleation behavior had been controlled.

AB - With direct growth technologies for obtaining ribbon-type silicon (Si) wafers from molten Si, the horizontal growth process is much faster than the vertical one in terms of the growth rate of the wafer. However, such a fast growth rate is likely to create grains of a relatively small size in the Si wafer, resulting in limited efficiency caused by grain boundary recombination. In this regard, controlling the grain growth behavior of the Si wafer with processing parameters such as the temperature of the substrate and its moving speed is very important in the horizontal growth process. The present investigation produced the experimental findings concerning the processing parameters for controlling the grain size. The size of the grains on the surface of the Si wafer increased to around 180 μm at a lower substrate temperature and a slower the moving speed of the substrate due to the increasing thickness of the Si wafer. However, the growth rate of the grains was observed to have little relation to the variations in the wafer thickness resulting from the processing parameters unless the nucleation behavior had been controlled.

KW - Growth

KW - Nucleation

KW - Photovoltaic

KW - Silicon

KW - Wafer

UR - http://www.scopus.com/inward/record.url?scp=84905500787&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905500787&partnerID=8YFLogxK

U2 - 10.3938/jkps.65.190

DO - 10.3938/jkps.65.190

M3 - Article

AN - SCOPUS:84905500787

VL - 65

SP - 190

EP - 195

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 2

ER -