Graphene diffusion barrier for forming ohmic contact on N-polar n-type GaN for high-power vertical-geometry light-emitting diodes

Dae Hyun Kim, Jae Seong Park, Tae Yeon Seong

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Graphene sheets were employed as a diffusion barrier to form highly reliable ohmic contacts to N-polar n-GaN for high-power vertical-configuration LEDs (VLEDs). Before annealing, both Ti/Al and Ti/graphene/Al contacts exhibit ohmic behavior. After annealing at 250 °C, unlike the Ti/Al contact, the Ti/graphene/Al contacts remain ohmic with a contact resistivity of 7.5 × 10-4Ωcm2. Secondary ion mass spectroscopy (SIMS) results show that the graphene sheets serve as a barrier to the outdiffusion of Ga atoms into the electrode. On the basis of SIMS and X-ray photoemission spectroscopy results, the ohmic and degradation behaviors of the Ti-based contacts are described and discussed.

Original languageEnglish
Article number046501
JournalApplied Physics Express
Volume7
Issue number4
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Diffusion barriers
Ohmic contacts
Graphene
Light emitting diodes
electric contacts
graphene
light emitting diodes
Geometry
geometry
mass spectroscopy
Spectroscopy
Annealing
annealing
Ions
Photoelectron spectroscopy
X ray spectroscopy
ions
photoelectric emission
degradation
Degradation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Graphene diffusion barrier for forming ohmic contact on N-polar n-type GaN for high-power vertical-geometry light-emitting diodes. / Kim, Dae Hyun; Park, Jae Seong; Seong, Tae Yeon.

In: Applied Physics Express, Vol. 7, No. 4, 046501, 01.01.2014.

Research output: Contribution to journalArticle

@article{ca34b20ba20c41ad9147961856dd5eae,
title = "Graphene diffusion barrier for forming ohmic contact on N-polar n-type GaN for high-power vertical-geometry light-emitting diodes",
abstract = "Graphene sheets were employed as a diffusion barrier to form highly reliable ohmic contacts to N-polar n-GaN for high-power vertical-configuration LEDs (VLEDs). Before annealing, both Ti/Al and Ti/graphene/Al contacts exhibit ohmic behavior. After annealing at 250 °C, unlike the Ti/Al contact, the Ti/graphene/Al contacts remain ohmic with a contact resistivity of 7.5 × 10-4Ωcm2. Secondary ion mass spectroscopy (SIMS) results show that the graphene sheets serve as a barrier to the outdiffusion of Ga atoms into the electrode. On the basis of SIMS and X-ray photoemission spectroscopy results, the ohmic and degradation behaviors of the Ti-based contacts are described and discussed.",
author = "Kim, {Dae Hyun} and Park, {Jae Seong} and Seong, {Tae Yeon}",
year = "2014",
month = "1",
day = "1",
doi = "10.7567/APEX.7.046501",
language = "English",
volume = "7",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "4",

}

TY - JOUR

T1 - Graphene diffusion barrier for forming ohmic contact on N-polar n-type GaN for high-power vertical-geometry light-emitting diodes

AU - Kim, Dae Hyun

AU - Park, Jae Seong

AU - Seong, Tae Yeon

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Graphene sheets were employed as a diffusion barrier to form highly reliable ohmic contacts to N-polar n-GaN for high-power vertical-configuration LEDs (VLEDs). Before annealing, both Ti/Al and Ti/graphene/Al contacts exhibit ohmic behavior. After annealing at 250 °C, unlike the Ti/Al contact, the Ti/graphene/Al contacts remain ohmic with a contact resistivity of 7.5 × 10-4Ωcm2. Secondary ion mass spectroscopy (SIMS) results show that the graphene sheets serve as a barrier to the outdiffusion of Ga atoms into the electrode. On the basis of SIMS and X-ray photoemission spectroscopy results, the ohmic and degradation behaviors of the Ti-based contacts are described and discussed.

AB - Graphene sheets were employed as a diffusion barrier to form highly reliable ohmic contacts to N-polar n-GaN for high-power vertical-configuration LEDs (VLEDs). Before annealing, both Ti/Al and Ti/graphene/Al contacts exhibit ohmic behavior. After annealing at 250 °C, unlike the Ti/Al contact, the Ti/graphene/Al contacts remain ohmic with a contact resistivity of 7.5 × 10-4Ωcm2. Secondary ion mass spectroscopy (SIMS) results show that the graphene sheets serve as a barrier to the outdiffusion of Ga atoms into the electrode. On the basis of SIMS and X-ray photoemission spectroscopy results, the ohmic and degradation behaviors of the Ti-based contacts are described and discussed.

UR - http://www.scopus.com/inward/record.url?scp=84904624732&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904624732&partnerID=8YFLogxK

U2 - 10.7567/APEX.7.046501

DO - 10.7567/APEX.7.046501

M3 - Article

VL - 7

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 4

M1 - 046501

ER -