Graphene oxide assisted spontaneous growth of V2O5nanowires at room temperature

Minoh Lee, Won G. Hong, Hu Young Jeong, Suresh Kannan Balasingam, Zonghoon Lee, Sung Jin Chang, Byung Hoon Kim, Yongseok Jun

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Graphene-decorated single crystalline V2O5nanowires (G-VONs) have been synthesized by mixing graphene oxide (GO) and V2O5suspensions at room temperature. In this process, V2O5nanowires (VONs) are formed spontaneously from commercial V2O5particles with the aid of GO. The as-formed one dimensional G-VONs were characterized by using a X-ray diffractometer, a X-ray photoelectron spectrometer, a scanning electron microscope, and a transmission electron microscope. GO plays a vital role in the VON formation with the simultaneous reduction of GO. A single G-VON showed superior electrical conductivity compared with that of the pure VONs obtained from the sol-gel method. This could be ascribed to the insertion of rGO sheets into the V2O5layered structure, which was further confirmed by electron energy loss spectroscopy. This journal is

Original languageEnglish
Pages (from-to)11066-11071
Number of pages6
JournalNanoscale
Volume6
Issue number19
DOIs
Publication statusPublished - 2014 Oct 7
Externally publishedYes

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Oxides
Graphene
Temperature
Crystalline materials
Electron microscopes
X rays
Electron energy loss spectroscopy
Diffractometers
Photoelectrons
Sol-gel process
Spectrometers
Scanning

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Lee, M., Hong, W. G., Jeong, H. Y., Balasingam, S. K., Lee, Z., Chang, S. J., ... Jun, Y. (2014). Graphene oxide assisted spontaneous growth of V2O5nanowires at room temperature. Nanoscale, 6(19), 11066-11071. https://doi.org/10.1039/c4nr01780c

Graphene oxide assisted spontaneous growth of V2O5nanowires at room temperature. / Lee, Minoh; Hong, Won G.; Jeong, Hu Young; Balasingam, Suresh Kannan; Lee, Zonghoon; Chang, Sung Jin; Kim, Byung Hoon; Jun, Yongseok.

In: Nanoscale, Vol. 6, No. 19, 07.10.2014, p. 11066-11071.

Research output: Contribution to journalArticle

Lee, M, Hong, WG, Jeong, HY, Balasingam, SK, Lee, Z, Chang, SJ, Kim, BH & Jun, Y 2014, 'Graphene oxide assisted spontaneous growth of V2O5nanowires at room temperature', Nanoscale, vol. 6, no. 19, pp. 11066-11071. https://doi.org/10.1039/c4nr01780c
Lee M, Hong WG, Jeong HY, Balasingam SK, Lee Z, Chang SJ et al. Graphene oxide assisted spontaneous growth of V2O5nanowires at room temperature. Nanoscale. 2014 Oct 7;6(19):11066-11071. https://doi.org/10.1039/c4nr01780c
Lee, Minoh ; Hong, Won G. ; Jeong, Hu Young ; Balasingam, Suresh Kannan ; Lee, Zonghoon ; Chang, Sung Jin ; Kim, Byung Hoon ; Jun, Yongseok. / Graphene oxide assisted spontaneous growth of V2O5nanowires at room temperature. In: Nanoscale. 2014 ; Vol. 6, No. 19. pp. 11066-11071.
@article{9c7dbb0be157497bbc2f7a9a09b77767,
title = "Graphene oxide assisted spontaneous growth of V2O5nanowires at room temperature",
abstract = "Graphene-decorated single crystalline V2O5nanowires (G-VONs) have been synthesized by mixing graphene oxide (GO) and V2O5suspensions at room temperature. In this process, V2O5nanowires (VONs) are formed spontaneously from commercial V2O5particles with the aid of GO. The as-formed one dimensional G-VONs were characterized by using a X-ray diffractometer, a X-ray photoelectron spectrometer, a scanning electron microscope, and a transmission electron microscope. GO plays a vital role in the VON formation with the simultaneous reduction of GO. A single G-VON showed superior electrical conductivity compared with that of the pure VONs obtained from the sol-gel method. This could be ascribed to the insertion of rGO sheets into the V2O5layered structure, which was further confirmed by electron energy loss spectroscopy. This journal is",
author = "Minoh Lee and Hong, {Won G.} and Jeong, {Hu Young} and Balasingam, {Suresh Kannan} and Zonghoon Lee and Chang, {Sung Jin} and Kim, {Byung Hoon} and Yongseok Jun",
year = "2014",
month = "10",
day = "7",
doi = "10.1039/c4nr01780c",
language = "English",
volume = "6",
pages = "11066--11071",
journal = "Nanoscale",
issn = "2040-3364",
publisher = "Royal Society of Chemistry",
number = "19",

}

TY - JOUR

T1 - Graphene oxide assisted spontaneous growth of V2O5nanowires at room temperature

AU - Lee, Minoh

AU - Hong, Won G.

AU - Jeong, Hu Young

AU - Balasingam, Suresh Kannan

AU - Lee, Zonghoon

AU - Chang, Sung Jin

AU - Kim, Byung Hoon

AU - Jun, Yongseok

PY - 2014/10/7

Y1 - 2014/10/7

N2 - Graphene-decorated single crystalline V2O5nanowires (G-VONs) have been synthesized by mixing graphene oxide (GO) and V2O5suspensions at room temperature. In this process, V2O5nanowires (VONs) are formed spontaneously from commercial V2O5particles with the aid of GO. The as-formed one dimensional G-VONs were characterized by using a X-ray diffractometer, a X-ray photoelectron spectrometer, a scanning electron microscope, and a transmission electron microscope. GO plays a vital role in the VON formation with the simultaneous reduction of GO. A single G-VON showed superior electrical conductivity compared with that of the pure VONs obtained from the sol-gel method. This could be ascribed to the insertion of rGO sheets into the V2O5layered structure, which was further confirmed by electron energy loss spectroscopy. This journal is

AB - Graphene-decorated single crystalline V2O5nanowires (G-VONs) have been synthesized by mixing graphene oxide (GO) and V2O5suspensions at room temperature. In this process, V2O5nanowires (VONs) are formed spontaneously from commercial V2O5particles with the aid of GO. The as-formed one dimensional G-VONs were characterized by using a X-ray diffractometer, a X-ray photoelectron spectrometer, a scanning electron microscope, and a transmission electron microscope. GO plays a vital role in the VON formation with the simultaneous reduction of GO. A single G-VON showed superior electrical conductivity compared with that of the pure VONs obtained from the sol-gel method. This could be ascribed to the insertion of rGO sheets into the V2O5layered structure, which was further confirmed by electron energy loss spectroscopy. This journal is

UR - http://www.scopus.com/inward/record.url?scp=84907159520&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907159520&partnerID=8YFLogxK

U2 - 10.1039/c4nr01780c

DO - 10.1039/c4nr01780c

M3 - Article

AN - SCOPUS:84907159520

VL - 6

SP - 11066

EP - 11071

JO - Nanoscale

JF - Nanoscale

SN - 2040-3364

IS - 19

ER -