Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells

Kyung D. Lee, Myung J. Park, Do Yeon Kim, Soo M. Kim, Byungjun Kang, Seongtak Kim, Hyunho Kim, Haeseok Lee, Yoon Mook Kang, Suk Goo Yoon, Byung H. Hong, Donghwan Kim

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm<sup>2</sup>) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

Original languageEnglish
Pages (from-to)19043-19049
Number of pages7
JournalACS Applied Materials and Interfaces
Volume7
Issue number34
DOIs
Publication statusPublished - 2015 Aug 12

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Graphite
Silicon solar cells
Graphene
Semiconductor quantum dots
Crystalline materials
Conversion efficiency
Silicon
Spraying
Short circuit currents
Nozzles
Suspensions
Current density
Coatings
Kinetics
Substrates
Air

Keywords

  • energy-down-shift
  • GQD layers
  • graphene quantum dots
  • light absorption
  • silicon solar cells

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells. / Lee, Kyung D.; Park, Myung J.; Kim, Do Yeon; Kim, Soo M.; Kang, Byungjun; Kim, Seongtak; Kim, Hyunho; Lee, Haeseok; Kang, Yoon Mook; Yoon, Suk Goo; Hong, Byung H.; Kim, Donghwan.

In: ACS Applied Materials and Interfaces, Vol. 7, No. 34, 12.08.2015, p. 19043-19049.

Research output: Contribution to journalArticle

Lee, Kyung D. ; Park, Myung J. ; Kim, Do Yeon ; Kim, Soo M. ; Kang, Byungjun ; Kim, Seongtak ; Kim, Hyunho ; Lee, Haeseok ; Kang, Yoon Mook ; Yoon, Suk Goo ; Hong, Byung H. ; Kim, Donghwan. / Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells. In: ACS Applied Materials and Interfaces. 2015 ; Vol. 7, No. 34. pp. 19043-19049.
@article{ac18ab634e9c4844b59acc762cc0005a,
title = "Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells",
abstract = "Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94{\%} (0.9 mA/cm2) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7{\%} (0.4 percentage points).",
keywords = "energy-down-shift, GQD layers, graphene quantum dots, light absorption, silicon solar cells",
author = "Lee, {Kyung D.} and Park, {Myung J.} and Kim, {Do Yeon} and Kim, {Soo M.} and Byungjun Kang and Seongtak Kim and Hyunho Kim and Haeseok Lee and Kang, {Yoon Mook} and Yoon, {Suk Goo} and Hong, {Byung H.} and Donghwan Kim",
year = "2015",
month = "8",
day = "12",
doi = "10.1021/acsami.5b03672",
language = "English",
volume = "7",
pages = "19043--19049",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "34",

}

TY - JOUR

T1 - Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells

AU - Lee, Kyung D.

AU - Park, Myung J.

AU - Kim, Do Yeon

AU - Kim, Soo M.

AU - Kang, Byungjun

AU - Kim, Seongtak

AU - Kim, Hyunho

AU - Lee, Haeseok

AU - Kang, Yoon Mook

AU - Yoon, Suk Goo

AU - Hong, Byung H.

AU - Kim, Donghwan

PY - 2015/8/12

Y1 - 2015/8/12

N2 - Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm2) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

AB - Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm2) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

KW - energy-down-shift

KW - GQD layers

KW - graphene quantum dots

KW - light absorption

KW - silicon solar cells

UR - http://www.scopus.com/inward/record.url?scp=84940910633&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84940910633&partnerID=8YFLogxK

U2 - 10.1021/acsami.5b03672

DO - 10.1021/acsami.5b03672

M3 - Article

VL - 7

SP - 19043

EP - 19049

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 34

ER -