Green-function calculations of coherent electron transport in a gated Si nanowire

Young Jo Ko, Mincheol Shin, Jeong Sook Ha, Kyoung Wan Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We describe a detailed numerical scheme to calculate electron transport in quantum wires using the Green function formalism combined with tight-binding orbital basis. As an example of the application, we study the electron transport in a Si nanowire containing a finite potential barrier. The effects of nonzero bias, temperature, and disorder on the barrier-induced oscillatory conductance are investigated within the context of coherent transport model. The oscillatory behavior of the conductance as a function of the Fermi energy is found to be highly sensitive to sample disorder and limited to a very low temperature and a small bias range.

Original languageEnglish
Pages (from-to)19-26
Number of pages8
JournalETRI Journal
Volume22
Issue number3
Publication statusPublished - 2000 Sep 1
Externally publishedYes

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Green's function
Nanowires
Semiconductor quantum wires
Fermi level
Temperature
Electron Transport

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Green-function calculations of coherent electron transport in a gated Si nanowire. / Ko, Young Jo; Shin, Mincheol; Ha, Jeong Sook; Park, Kyoung Wan.

In: ETRI Journal, Vol. 22, No. 3, 01.09.2000, p. 19-26.

Research output: Contribution to journalArticle

Ko, Young Jo ; Shin, Mincheol ; Ha, Jeong Sook ; Park, Kyoung Wan. / Green-function calculations of coherent electron transport in a gated Si nanowire. In: ETRI Journal. 2000 ; Vol. 22, No. 3. pp. 19-26.
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