Grid oscillators

Zorana B. Popović, Moonil Kim, David B. Rutledge

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state oscillators in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not require an external locking signal, and the combining is done in free space. In addition, the loaded grid is a planar structure amenable to monolithic integration. Measurements on a 25-MESFET grid at 9.7 GHz show power-combining and frequencylocking without an external locking signal, with an ERP of 37 W. Experimental far-field patterns agree with theoretical results obtained using reciprocity.

Original languageEnglish
Pages (from-to)1003-1010
Number of pages8
JournalInternational Journal of Infrared and Millimeter Waves
Volume9
Issue number11
DOIs
Publication statusPublished - 1988 Nov 1
Externally publishedYes

Fingerprint

Solid state oscillators
Negative resistance
Enterprise resource planning
Millimeter waves
grids
Microwaves
oscillators
locking
negative resistance devices
planar structures
millimeter waves
far fields
field effect transistors
solid state
microwaves

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)
  • Electrical and Electronic Engineering

Cite this

Grid oscillators. / Popović, Zorana B.; Kim, Moonil; Rutledge, David B.

In: International Journal of Infrared and Millimeter Waves, Vol. 9, No. 11, 01.11.1988, p. 1003-1010.

Research output: Contribution to journalArticle

Popović, Zorana B. ; Kim, Moonil ; Rutledge, David B. / Grid oscillators. In: International Journal of Infrared and Millimeter Waves. 1988 ; Vol. 9, No. 11. pp. 1003-1010.
@article{2148210f01d0468e8510e976284086b1,
title = "Grid oscillators",
abstract = "Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state oscillators in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not require an external locking signal, and the combining is done in free space. In addition, the loaded grid is a planar structure amenable to monolithic integration. Measurements on a 25-MESFET grid at 9.7 GHz show power-combining and frequencylocking without an external locking signal, with an ERP of 37 W. Experimental far-field patterns agree with theoretical results obtained using reciprocity.",
author = "Popović, {Zorana B.} and Moonil Kim and Rutledge, {David B.}",
year = "1988",
month = "11",
day = "1",
doi = "10.1007/BF01010771",
language = "English",
volume = "9",
pages = "1003--1010",
journal = "Journal of Infrared, Millimeter, and Terahertz Waves",
issn = "1866-6892",
publisher = "Springer New York",
number = "11",

}

TY - JOUR

T1 - Grid oscillators

AU - Popović, Zorana B.

AU - Kim, Moonil

AU - Rutledge, David B.

PY - 1988/11/1

Y1 - 1988/11/1

N2 - Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state oscillators in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not require an external locking signal, and the combining is done in free space. In addition, the loaded grid is a planar structure amenable to monolithic integration. Measurements on a 25-MESFET grid at 9.7 GHz show power-combining and frequencylocking without an external locking signal, with an ERP of 37 W. Experimental far-field patterns agree with theoretical results obtained using reciprocity.

AB - Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state oscillators in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not require an external locking signal, and the combining is done in free space. In addition, the loaded grid is a planar structure amenable to monolithic integration. Measurements on a 25-MESFET grid at 9.7 GHz show power-combining and frequencylocking without an external locking signal, with an ERP of 37 W. Experimental far-field patterns agree with theoretical results obtained using reciprocity.

UR - http://www.scopus.com/inward/record.url?scp=34250087190&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250087190&partnerID=8YFLogxK

U2 - 10.1007/BF01010771

DO - 10.1007/BF01010771

M3 - Article

VL - 9

SP - 1003

EP - 1010

JO - Journal of Infrared, Millimeter, and Terahertz Waves

JF - Journal of Infrared, Millimeter, and Terahertz Waves

SN - 1866-6892

IS - 11

ER -