Abstract
Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state oscillators in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not require an external locking signal, and the combining is done in free space. In addition, the loaded grid is a planar structure amenable to monolithic integration. Measurements on a 25-MESFET grid at 9.7 GHz show power-combining and frequencylocking without an external locking signal, with an ERP of 37 W. Experimental far-field patterns agree with theoretical results obtained using reciprocity.
| Original language | English |
|---|---|
| Pages (from-to) | 1003-1010 |
| Number of pages | 8 |
| Journal | International Journal of Infrared and Millimeter Waves |
| Volume | 9 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1988 Nov |
ASJC Scopus subject areas
- Radiation
- Atomic and Molecular Physics, and Optics
- Instrumentation
- Condensed Matter Physics
- Physics and Astronomy (miscellaneous)
- Electrical and Electronic Engineering