Group III-nitride radial heterojunction nanowire light emitters

Michael A. Mastro; Josh Caldwell; Mark Twigg; Blake Simpkins; Orest Glembocki; Ron T. Holm; Charles R. Eddy; Fritz Kub; Hong Yeol Kim; Jaehui Ahn; Jihyun Kim

Group III-nitride radial heterojunction nanowire light emitters

Michael A. Mastro, Josh Caldwell, Mark Twigg, Blake Simpkins, Orest Glembocki, Ron T. Holm, Charles R. Eddy, Fritz Kub, Hong Yeol Kim, Jaehui Ahn, Jihyun Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.

Original language	English
Pages (from-to)	584-587
Number of pages	4
Journal	Journal of Ceramic Processing Research
Volume	9
Issue number	6
Publication status	Published - 2008

Keywords

Defect
III-nitride
Nanowire

ASJC Scopus subject areas

Ceramics and Composites

Cite this

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title = "Group III-nitride radial heterojunction nanowire light emitters",

abstract = "Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.",

keywords = "Defect, III-nitride, Nanowire",

author = "Mastro, {Michael A.} and Josh Caldwell and Mark Twigg and Blake Simpkins and Orest Glembocki and Holm, {Ron T.} and Eddy, {Charles R.} and Fritz Kub and Kim, {Hong Yeol} and Jaehui Ahn and Jihyun Kim",

year = "2008",

language = "English",

volume = "9",

pages = "584--587",

journal = "Journal of Ceramic Processing Research",

issn = "1229-9162",

publisher = "Hanyang University",

number = "6",

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TY - JOUR

T1 - Group III-nitride radial heterojunction nanowire light emitters

AU - Mastro, Michael A.

AU - Caldwell, Josh

AU - Twigg, Mark

AU - Simpkins, Blake

AU - Glembocki, Orest

AU - Holm, Ron T.

AU - Eddy, Charles R.

AU - Kub, Fritz

AU - Kim, Hong Yeol

AU - Ahn, Jaehui

AU - Kim, Jihyun

PY - 2008

Y1 - 2008

N2 - Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.

AB - Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.

KW - Defect

KW - III-nitride

KW - Nanowire

UR - http://www.scopus.com/inward/record.url?scp=59549099609&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:59549099609

SN - 1229-9162

VL - 9

SP - 584

EP - 587

JO - Journal of Ceramic Processing Research

JF - Journal of Ceramic Processing Research

IS - 6

ER -

Group III-nitride radial heterojunction nanowire light emitters

Abstract

Keywords

ASJC Scopus subject areas

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