Group III-nitride radial heterojunction nanowire light emitters

Michael A. Mastro, Josh Caldwell, Mark Twigg, Blake Simpkins, Orest Glembocki, Ron T. Holm, Charles R. Eddy, Fritz Kub, Hong Yeol Kim, Jaehui Ahn, Jihyun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.

Original languageEnglish
Pages (from-to)584-587
Number of pages4
JournalJournal of Ceramic Processing Research
Volume9
Issue number6
Publication statusPublished - 2008

Keywords

  • Defect
  • III-nitride
  • Nanowire

ASJC Scopus subject areas

  • Ceramics and Composites

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  • Cite this

    Mastro, M. A., Caldwell, J., Twigg, M., Simpkins, B., Glembocki, O., Holm, R. T., Eddy, C. R., Kub, F., Kim, H. Y., Ahn, J., & Kim, J. (2008). Group III-nitride radial heterojunction nanowire light emitters. Journal of Ceramic Processing Research, 9(6), 584-587.