Growth and characterization of CdZnS thin film buffer layers by chemical bath deposition

Jiyon Song, Sheng S. Li, S. Yoon, W. K. Kim, Ji Hyun Kim, J. Chen, V. Craciun, T. J. Anderson, O. D. Crisalle, Fan Ren

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

In this paper we report the study of CdZnS thin films grown on the soda-lime glass (SLG) substrates by Chemical Bath Deposition (CBD) process for buffer layer applications in CuGaSe 2 (CGS) solar cells. Structural, surface morphology, optical, and electrical properties of as-deposited CdZnS films were investigated by XRD, SEM, spectrophotometer, and four probes resistivity measurements as a function of Zn- composition in the solution. The CdZnS films have hexagonal structures. The grain size of CdZnS films was found to increase with increasing Zn- content in the solution. The films with 30% of Zn in the solution showed a better than 80% transmittance for wavelengths longer than 600 nm and film thickness less than 50 nm. The values of energy band gaps obtained are 2.40, 2.55, and 2.70 eV for Zn- content of 0, 30, and 50%, respectively. The resistivity of CdZnS films was found to increase as the Zn content increases.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages449-452
Number of pages4
Publication statusPublished - 2005
Externally publishedYes
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: 2005 Jan 32005 Jan 7

Other

Other31st IEEE Photovoltaic Specialists Conference - 2005
CountryUnited States
CityLake Buena Vista, FL
Period05/1/305/1/7

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Control and Systems Engineering

Cite this

Song, J., Li, S. S., Yoon, S., Kim, W. K., Kim, J. H., Chen, J., ... Ren, F. (2005). Growth and characterization of CdZnS thin film buffer layers by chemical bath deposition. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 449-452)