Growth and characterization of GaN epilayers grown at various flow rates of trimetylgallium during growth of nucleation layers

Cheul Ro Lee, Sung Jin Son, In-Hwan Lee, Jae Young Leem, Sam Kyu Noh

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

GaN epilayers have been grown on GaN nucleation layers as a function of the flow rate of TMG (trimetylgallium) decreases by deposition (MOCVD). The size of crystalline and amorphous GaN droplets became smaller as the flow rate of TMG (10.0, 8.0, 6.0, 4.0 SCCM, respectively) decreases during the growth of nucleation layers having the same thickness. The surface morphology and crystallinity of the epilayers characterized by DCXRD (double crystal X-ray diffractometer) depend on the TMG flow rate during growth of the GaN nucleation layers. The GaN epilayers grown on a nucleation layer at a rate of 8.0 SCCM exhibits the best crystallinity.

Original languageEnglish
Pages (from-to)27-31
Number of pages5
JournalJournal of Crystal Growth
Volume171
Issue number1-2
DOIs
Publication statusPublished - 1997 Jan 1

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Epilayers
Nucleation
flow velocity
Flow rate
nucleation
crystallinity
Diffractometers
Metallorganic chemical vapor deposition
diffractometers
metalorganic chemical vapor deposition
Surface morphology
Crystalline materials
X rays
Crystals
crystals
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Growth and characterization of GaN epilayers grown at various flow rates of trimetylgallium during growth of nucleation layers. / Lee, Cheul Ro; Son, Sung Jin; Lee, In-Hwan; Leem, Jae Young; Noh, Sam Kyu.

In: Journal of Crystal Growth, Vol. 171, No. 1-2, 01.01.1997, p. 27-31.

Research output: Contribution to journalArticle

@article{7bfe467f9c7841d385d2063555809f17,
title = "Growth and characterization of GaN epilayers grown at various flow rates of trimetylgallium during growth of nucleation layers",
abstract = "GaN epilayers have been grown on GaN nucleation layers as a function of the flow rate of TMG (trimetylgallium) decreases by deposition (MOCVD). The size of crystalline and amorphous GaN droplets became smaller as the flow rate of TMG (10.0, 8.0, 6.0, 4.0 SCCM, respectively) decreases during the growth of nucleation layers having the same thickness. The surface morphology and crystallinity of the epilayers characterized by DCXRD (double crystal X-ray diffractometer) depend on the TMG flow rate during growth of the GaN nucleation layers. The GaN epilayers grown on a nucleation layer at a rate of 8.0 SCCM exhibits the best crystallinity.",
author = "Lee, {Cheul Ro} and Son, {Sung Jin} and In-Hwan Lee and Leem, {Jae Young} and Noh, {Sam Kyu}",
year = "1997",
month = "1",
day = "1",
doi = "10.1016/S0022-0248(96)00417-4",
language = "English",
volume = "171",
pages = "27--31",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Growth and characterization of GaN epilayers grown at various flow rates of trimetylgallium during growth of nucleation layers

AU - Lee, Cheul Ro

AU - Son, Sung Jin

AU - Lee, In-Hwan

AU - Leem, Jae Young

AU - Noh, Sam Kyu

PY - 1997/1/1

Y1 - 1997/1/1

N2 - GaN epilayers have been grown on GaN nucleation layers as a function of the flow rate of TMG (trimetylgallium) decreases by deposition (MOCVD). The size of crystalline and amorphous GaN droplets became smaller as the flow rate of TMG (10.0, 8.0, 6.0, 4.0 SCCM, respectively) decreases during the growth of nucleation layers having the same thickness. The surface morphology and crystallinity of the epilayers characterized by DCXRD (double crystal X-ray diffractometer) depend on the TMG flow rate during growth of the GaN nucleation layers. The GaN epilayers grown on a nucleation layer at a rate of 8.0 SCCM exhibits the best crystallinity.

AB - GaN epilayers have been grown on GaN nucleation layers as a function of the flow rate of TMG (trimetylgallium) decreases by deposition (MOCVD). The size of crystalline and amorphous GaN droplets became smaller as the flow rate of TMG (10.0, 8.0, 6.0, 4.0 SCCM, respectively) decreases during the growth of nucleation layers having the same thickness. The surface morphology and crystallinity of the epilayers characterized by DCXRD (double crystal X-ray diffractometer) depend on the TMG flow rate during growth of the GaN nucleation layers. The GaN epilayers grown on a nucleation layer at a rate of 8.0 SCCM exhibits the best crystallinity.

UR - http://www.scopus.com/inward/record.url?scp=0031546317&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031546317&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(96)00417-4

DO - 10.1016/S0022-0248(96)00417-4

M3 - Article

VL - 171

SP - 27

EP - 31

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-2

ER -