Abstract
GaN epilayers have been grown on GaN nucleation layers as a function of the flow rate of TMG (trimetylgallium) decreases by deposition (MOCVD). The size of crystalline and amorphous GaN droplets became smaller as the flow rate of TMG (10.0, 8.0, 6.0, 4.0 SCCM, respectively) decreases during the growth of nucleation layers having the same thickness. The surface morphology and crystallinity of the epilayers characterized by DCXRD (double crystal X-ray diffractometer) depend on the TMG flow rate during growth of the GaN nucleation layers. The GaN epilayers grown on a nucleation layer at a rate of 8.0 SCCM exhibits the best crystallinity.
| Original language | English |
|---|---|
| Pages (from-to) | 27-31 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 171 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 1997 Jan 1 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Cite this
Growth and characterization of GaN epilayers grown at various flow rates of trimetylgallium during growth of nucleation layers. / Lee, Cheul Ro; Son, Sung Jin; Lee, In-Hwan; Leem, Jae Young; Noh, Sam Kyu.
In: Journal of Crystal Growth, Vol. 171, No. 1-2, 01.01.1997, p. 27-31.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Growth and characterization of GaN epilayers grown at various flow rates of trimetylgallium during growth of nucleation layers
AU - Lee, Cheul Ro
AU - Son, Sung Jin
AU - Lee, In-Hwan
AU - Leem, Jae Young
AU - Noh, Sam Kyu
PY - 1997/1/1
Y1 - 1997/1/1
N2 - GaN epilayers have been grown on GaN nucleation layers as a function of the flow rate of TMG (trimetylgallium) decreases by deposition (MOCVD). The size of crystalline and amorphous GaN droplets became smaller as the flow rate of TMG (10.0, 8.0, 6.0, 4.0 SCCM, respectively) decreases during the growth of nucleation layers having the same thickness. The surface morphology and crystallinity of the epilayers characterized by DCXRD (double crystal X-ray diffractometer) depend on the TMG flow rate during growth of the GaN nucleation layers. The GaN epilayers grown on a nucleation layer at a rate of 8.0 SCCM exhibits the best crystallinity.
AB - GaN epilayers have been grown on GaN nucleation layers as a function of the flow rate of TMG (trimetylgallium) decreases by deposition (MOCVD). The size of crystalline and amorphous GaN droplets became smaller as the flow rate of TMG (10.0, 8.0, 6.0, 4.0 SCCM, respectively) decreases during the growth of nucleation layers having the same thickness. The surface morphology and crystallinity of the epilayers characterized by DCXRD (double crystal X-ray diffractometer) depend on the TMG flow rate during growth of the GaN nucleation layers. The GaN epilayers grown on a nucleation layer at a rate of 8.0 SCCM exhibits the best crystallinity.
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U2 - 10.1016/S0022-0248(96)00417-4
DO - 10.1016/S0022-0248(96)00417-4
M3 - Article
AN - SCOPUS:0031546317
VL - 171
SP - 27
EP - 31
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-2
ER -