Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers

A. B.M. Almamun Ashrafi, Akio Ueta, Adrian Avramescu, Hidekazu Kumano, Ikuo Suemune, Young Woo Ok, Tae Yeon Seong

Research output: Contribution to journalArticle

165 Citations (Scopus)

Abstract

A stable wurtzite phase of ZnO is commonly observed. In this letter, we report the growth and characterization of zinc-blende ZnO on GaAs(001) substrates. The ZnO films grown on GaAs(001) substrates using microwave-plasma-assisted metalorganic molecular-beam epitaxy were characterized by reflection high-energy electron diffraction, x-ray diffraction, transmission electron microscope, and atomic force microscope measurements. The use of a ZnS buffer layer was found to lead to the growth of the zinc-blende ZnO films. Although the zinc-blende ZnO films were polycrystalline with columnar structures, they showed bright band-edge luminescence at room temperature.

Original languageEnglish
Pages (from-to)550-552
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number5
DOIs
Publication statusPublished - 2000 Jan 31
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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