Growth and characterization of interfaces in p-type InGaAs/InP quantum-well infrared photodetectors with ultra-thin quantum wells

D. K. Sengupta, S. Kim, T. Horton, H. C. Kuo, S. Thomas, S. L. Jackson, A. P. Curtis, S. G. Bishop, M. Feng, G. E. Stillman, Y. C. Chang, H. C. Liu

Research output: Contribution to journalConference article

Abstract

P-type InGaAs/InP quantum-well infrared photodetectors operated at 4.55 μm require the growth of ultra-thin (10 angstroms) quantum wells. We report a study of interfaces in QWIPs grown by gas-source molecular beam epitaxy in which we optimized the group V source supply sequence so that a 6 K photoluminescence linewidth as narrow as 8.4 meV was observed from a structure with 10 angstroms wells. Analysis of the PL suggests that interface roughness was minimized. Cross-sectional scanning tunneling microscopy, double crystal x-ray diffraction, and cross-sectional tunneling electron microscopy confirmed that high-quality interfaces and uniform layers were obtained. Using the derived structural parameters, photocurrent spectral response was theoretically predicted for these QWIPs and then experimentally verified.

Original languageEnglish
Pages (from-to)225-230
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume450
Publication statusPublished - 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Sengupta, D. K., Kim, S., Horton, T., Kuo, H. C., Thomas, S., Jackson, S. L., Curtis, A. P., Bishop, S. G., Feng, M., Stillman, G. E., Chang, Y. C., & Liu, H. C. (1997). Growth and characterization of interfaces in p-type InGaAs/InP quantum-well infrared photodetectors with ultra-thin quantum wells. Materials Research Society Symposium - Proceedings, 450, 225-230.