Growth and characterization of interfaces in p-type InGaAs/InP quantum-well infrared photodetectors with ultra-thin quantum wells

D. K. Sengupta, Sangsig Kim, T. Horton, H. C. Kuo, S. Thomas, S. L. Jackson, A. P. Curtis, S. G. Bishop, M. Feng, G. E. Stillman, Y. C. Chang, H. C. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

P-type InGaAs/InP quantum-well infrared photodetectors operated at 4.55 μm require the growth of ultra-thin (10 angstroms) quantum wells. We report a study of interfaces in QWIPs grown by gas-source molecular beam epitaxy in which we optimized the group V source supply sequence so that a 6 K photoluminescence linewidth as narrow as 8.4 meV was observed from a structure with 10 angstroms wells. Analysis of the PL suggests that interface roughness was minimized. Cross-sectional scanning tunneling microscopy, double crystal x-ray diffraction, and cross-sectional tunneling electron microscopy confirmed that high-quality interfaces and uniform layers were obtained. Using the derived structural parameters, photocurrent spectral response was theoretically predicted for these QWIPs and then experimentally verified.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsM.L. Reed, M. Elwenspoek, S. Johansson, E. Obermeier, H. Fujita, Y. Uenishi
PublisherMaterials Research Society
Pages225-230
Number of pages6
Volume450
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 41996 Dec 5

Other

OtherProceedings of the 1996 MRS Fall Meeting
CityBoston, MA, USA
Period96/12/496/12/5

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Quantum well infrared photodetectors
Gas source molecular beam epitaxy
Scanning tunneling microscopy
Photocurrents
Linewidth
Semiconductor quantum wells
Electron microscopy
Photoluminescence
Diffraction
Surface roughness
X rays
Crystals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Sengupta, D. K., Kim, S., Horton, T., Kuo, H. C., Thomas, S., Jackson, S. L., ... Liu, H. C. (1997). Growth and characterization of interfaces in p-type InGaAs/InP quantum-well infrared photodetectors with ultra-thin quantum wells. In M. L. Reed, M. Elwenspoek, S. Johansson, E. Obermeier, H. Fujita, & Y. Uenishi (Eds.), Materials Research Society Symposium - Proceedings (Vol. 450, pp. 225-230). Materials Research Society.

Growth and characterization of interfaces in p-type InGaAs/InP quantum-well infrared photodetectors with ultra-thin quantum wells. / Sengupta, D. K.; Kim, Sangsig; Horton, T.; Kuo, H. C.; Thomas, S.; Jackson, S. L.; Curtis, A. P.; Bishop, S. G.; Feng, M.; Stillman, G. E.; Chang, Y. C.; Liu, H. C.

Materials Research Society Symposium - Proceedings. ed. / M.L. Reed; M. Elwenspoek; S. Johansson; E. Obermeier; H. Fujita; Y. Uenishi. Vol. 450 Materials Research Society, 1997. p. 225-230.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sengupta, DK, Kim, S, Horton, T, Kuo, HC, Thomas, S, Jackson, SL, Curtis, AP, Bishop, SG, Feng, M, Stillman, GE, Chang, YC & Liu, HC 1997, Growth and characterization of interfaces in p-type InGaAs/InP quantum-well infrared photodetectors with ultra-thin quantum wells. in ML Reed, M Elwenspoek, S Johansson, E Obermeier, H Fujita & Y Uenishi (eds), Materials Research Society Symposium - Proceedings. vol. 450, Materials Research Society, pp. 225-230, Proceedings of the 1996 MRS Fall Meeting, Boston, MA, USA, 96/12/4.
Sengupta DK, Kim S, Horton T, Kuo HC, Thomas S, Jackson SL et al. Growth and characterization of interfaces in p-type InGaAs/InP quantum-well infrared photodetectors with ultra-thin quantum wells. In Reed ML, Elwenspoek M, Johansson S, Obermeier E, Fujita H, Uenishi Y, editors, Materials Research Society Symposium - Proceedings. Vol. 450. Materials Research Society. 1997. p. 225-230
Sengupta, D. K. ; Kim, Sangsig ; Horton, T. ; Kuo, H. C. ; Thomas, S. ; Jackson, S. L. ; Curtis, A. P. ; Bishop, S. G. ; Feng, M. ; Stillman, G. E. ; Chang, Y. C. ; Liu, H. C. / Growth and characterization of interfaces in p-type InGaAs/InP quantum-well infrared photodetectors with ultra-thin quantum wells. Materials Research Society Symposium - Proceedings. editor / M.L. Reed ; M. Elwenspoek ; S. Johansson ; E. Obermeier ; H. Fujita ; Y. Uenishi. Vol. 450 Materials Research Society, 1997. pp. 225-230
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abstract = "P-type InGaAs/InP quantum-well infrared photodetectors operated at 4.55 μm require the growth of ultra-thin (10 angstroms) quantum wells. We report a study of interfaces in QWIPs grown by gas-source molecular beam epitaxy in which we optimized the group V source supply sequence so that a 6 K photoluminescence linewidth as narrow as 8.4 meV was observed from a structure with 10 angstroms wells. Analysis of the PL suggests that interface roughness was minimized. Cross-sectional scanning tunneling microscopy, double crystal x-ray diffraction, and cross-sectional tunneling electron microscopy confirmed that high-quality interfaces and uniform layers were obtained. Using the derived structural parameters, photocurrent spectral response was theoretically predicted for these QWIPs and then experimentally verified.",
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AU - Horton, T.

AU - Kuo, H. C.

AU - Thomas, S.

AU - Jackson, S. L.

AU - Curtis, A. P.

AU - Bishop, S. G.

AU - Feng, M.

AU - Stillman, G. E.

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AB - P-type InGaAs/InP quantum-well infrared photodetectors operated at 4.55 μm require the growth of ultra-thin (10 angstroms) quantum wells. We report a study of interfaces in QWIPs grown by gas-source molecular beam epitaxy in which we optimized the group V source supply sequence so that a 6 K photoluminescence linewidth as narrow as 8.4 meV was observed from a structure with 10 angstroms wells. Analysis of the PL suggests that interface roughness was minimized. Cross-sectional scanning tunneling microscopy, double crystal x-ray diffraction, and cross-sectional tunneling electron microscopy confirmed that high-quality interfaces and uniform layers were obtained. Using the derived structural parameters, photocurrent spectral response was theoretically predicted for these QWIPs and then experimentally verified.

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