Growth and electrical properties of nonpolar and polar Ga-doped ZnO thin films on LaAlO3 and SrTiO3 substrates

Ji Hong Kim, Ji Hyung Roh, Kyung Ju Lee, Sung Joon Moon, Jae Won Kim, Kang Min Do, Byung-Moo Moon, Sang Mo Koo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Ga-doped ZnO (GZO) thin films were grown on LaAlO3 (LAO) and SrTiO3 (STO) substrates by using a pulsed laser deposition (PLD) technique at various substrate temperatures. It was found that the nonpolar a-plane GZO thin films were grown on LAO (1 0 0) substrates. However, the polar c-plane or the c-plane coexistent with the a-plane GZO films were obtained on STO (1 0 0) substrates. The in-plane orientational relationship between the GZO films and substrates was also investigated. The electrical properties of the films were deeply affected by the growth orientation. The GZO films with a-axis oriented phase showed higher resistivity than with c-oriented phase, which can be ascribed to the lower mobility due to the increase in grain boundary scattering.

Original languageEnglish
Pages (from-to)72-75
Number of pages4
JournalJournal of Crystal Growth
Volume334
Issue number1
DOIs
Publication statusPublished - 2011 Nov 1

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Keywords

  • A1. Atomic force microscopy
  • A1. Hall measurement
  • A1. High resolution X-ray diffraction
  • A3. Pulsed laser deposition
  • B1. Ga-doped ZnO
  • B2. Semiconducting IIVI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

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