Growth and electrical properties of nonpolar and polar Ga-doped ZnO thin films on LaAlO3 and SrTiO3 substrates

Ji Hong Kim, Ji Hyung Roh, Kyung Ju Lee, Sung Joon Moon, Jae Won Kim, Kang Min Do, Byung Moo Moon, Sang Mo Koo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Ga-doped ZnO (GZO) thin films were grown on LaAlO3 (LAO) and SrTiO3 (STO) substrates by using a pulsed laser deposition (PLD) technique at various substrate temperatures. It was found that the nonpolar a-plane GZO thin films were grown on LAO (1 0 0) substrates. However, the polar c-plane or the c-plane coexistent with the a-plane GZO films were obtained on STO (1 0 0) substrates. The in-plane orientational relationship between the GZO films and substrates was also investigated. The electrical properties of the films were deeply affected by the growth orientation. The GZO films with a-axis oriented phase showed higher resistivity than with c-oriented phase, which can be ascribed to the lower mobility due to the increase in grain boundary scattering.

Original languageEnglish
Pages (from-to)72-75
Number of pages4
JournalJournal of Crystal Growth
Volume334
Issue number1
DOIs
Publication statusPublished - 2011 Nov 1

Keywords

  • A1. Atomic force microscopy
  • A1. Hall measurement
  • A1. High resolution X-ray diffraction
  • A3. Pulsed laser deposition
  • B1. Ga-doped ZnO
  • B2. Semiconducting IIVI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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