Abstract
We report on the growth of high-quality GaN epitaxial layers on Si(1 1 1) substrates using high-temperature-grown AlN as buffer layer by metalorganic chemical vapor deposition. It is found that the nitride compounds on the reactor wall have great influence on the initial surface condition of the Si substrates because they are dissociated from the wall and modifies the Si surface during the initial heat-up procedure. When the reactor wall is coated with the GaN after the growth of GaN/AlN/Si, the harmful Ga-containing droplets are formed on the AlN buffer layer, leading to deteriorated films. To prevent the droplets, coating AlN on the reactor wall (pre-treatment) is followed by the growth GaN/ALN/Si. This pre-treatment insures AlN environment and suppresses the formation of the droplets during initial heat-up, leading to reproducible and favorable surface condition for the growth of AlN buffer layer and subsequent GaN epitaxial films. In order to illustrate the optical properties of the GaN layer, photoluminescence is measured between 14 K and room temperature. Intense band edge emission and well-resolved excitonic transitions indicate an excellent optical quality of the epitaxial GaN films.
| Original language | English |
|---|---|
| Pages (from-to) | 73-78 |
| Number of pages | 6 |
| Journal | Journal of Crystal Growth |
| Volume | 235 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 2002 Feb 1 |
| Externally published | Yes |
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Keywords
- A3. Metalorganic chemical vapor deposition
- Al. Photoluminescence
- Al. Stresses
- Bl. Nitrides
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Cite this
Growth and optical properties of GaN on Si(1 1 1) substrates. / Lee, In-Hwan; Lim, S. J.; Park, Yongjo.
In: Journal of Crystal Growth, Vol. 235, No. 1-4, 01.02.2002, p. 73-78.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth and optical properties of GaN on Si(1 1 1) substrates
AU - Lee, In-Hwan
AU - Lim, S. J.
AU - Park, Yongjo
PY - 2002/2/1
Y1 - 2002/2/1
N2 - We report on the growth of high-quality GaN epitaxial layers on Si(1 1 1) substrates using high-temperature-grown AlN as buffer layer by metalorganic chemical vapor deposition. It is found that the nitride compounds on the reactor wall have great influence on the initial surface condition of the Si substrates because they are dissociated from the wall and modifies the Si surface during the initial heat-up procedure. When the reactor wall is coated with the GaN after the growth of GaN/AlN/Si, the harmful Ga-containing droplets are formed on the AlN buffer layer, leading to deteriorated films. To prevent the droplets, coating AlN on the reactor wall (pre-treatment) is followed by the growth GaN/ALN/Si. This pre-treatment insures AlN environment and suppresses the formation of the droplets during initial heat-up, leading to reproducible and favorable surface condition for the growth of AlN buffer layer and subsequent GaN epitaxial films. In order to illustrate the optical properties of the GaN layer, photoluminescence is measured between 14 K and room temperature. Intense band edge emission and well-resolved excitonic transitions indicate an excellent optical quality of the epitaxial GaN films.
AB - We report on the growth of high-quality GaN epitaxial layers on Si(1 1 1) substrates using high-temperature-grown AlN as buffer layer by metalorganic chemical vapor deposition. It is found that the nitride compounds on the reactor wall have great influence on the initial surface condition of the Si substrates because they are dissociated from the wall and modifies the Si surface during the initial heat-up procedure. When the reactor wall is coated with the GaN after the growth of GaN/AlN/Si, the harmful Ga-containing droplets are formed on the AlN buffer layer, leading to deteriorated films. To prevent the droplets, coating AlN on the reactor wall (pre-treatment) is followed by the growth GaN/ALN/Si. This pre-treatment insures AlN environment and suppresses the formation of the droplets during initial heat-up, leading to reproducible and favorable surface condition for the growth of AlN buffer layer and subsequent GaN epitaxial films. In order to illustrate the optical properties of the GaN layer, photoluminescence is measured between 14 K and room temperature. Intense band edge emission and well-resolved excitonic transitions indicate an excellent optical quality of the epitaxial GaN films.
KW - A3. Metalorganic chemical vapor deposition
KW - Al. Photoluminescence
KW - Al. Stresses
KW - Bl. Nitrides
UR - http://www.scopus.com/inward/record.url?scp=0036467206&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036467206&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(01)01794-8
DO - 10.1016/S0022-0248(01)01794-8
M3 - Article
AN - SCOPUS:0036467206
VL - 235
SP - 73
EP - 78
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -