Growth and scintillation properties of 3 in. diameter Ce doped Gd3Ga3Al2O12 scintillation single crystal

Kei Kamada, Yasuhiro Shoji, Vladimir V. Kochurikhin, Satoshi Okumura, Seiichi Yamamoto, Aya Nagura, Jungyeol Yeom, Shunsuke Kurosawa, Yuui Yokota, Yuji Ohashi, Martin Nikl, Akira Yoshikawa

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The 3 in. size Ce1%:Gd3Al2Ga3O12 single crystals were prepared by the Czochralski (Cz) method. Optical constants were measured. Chemical composition analysis and uniformity of scintillation decay and light yield along growth direction were evaluated. The timing resolution measurement for a pair of 3 mm×3 mm×3 mm size Ce:GAGG scintillator crystals was performed using Si-PMs.

Original languageEnglish
Pages (from-to)81-84
Number of pages4
JournalJournal of Crystal Growth
Volume452
DOIs
Publication statusPublished - 2016 Oct 15

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Keywords

  • A2. Single crystal growth
  • B1. Oxides
  • B2. Scintillator materials
  • B3. Scintillators

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Kamada, K., Shoji, Y., Kochurikhin, V. V., Okumura, S., Yamamoto, S., Nagura, A., ... Yoshikawa, A. (2016). Growth and scintillation properties of 3 in. diameter Ce doped Gd3Ga3Al2O12 scintillation single crystal. Journal of Crystal Growth, 452, 81-84. https://doi.org/10.1016/j.jcrysgro.2016.04.037