Growth behavior and electrical properties of a (Na0.5K 0.5)NbO3thin film deposited on a Pt/Ti/SiO2/Si substrate using RFmagnetron sputtering

Lee Seung Kang, Bo Yun Kim, In Tae Seo, Tae Geun Seong, Jin Seong Kim, Jong Woo Sun, Dong Soo Paik, Inrok Hwang, Bae Ho Park, Sahn Nahm

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

A crystalline (Na0.5K0.5)NbO3 (NKN) phase was formed for a film grown at 600°C, but a K5.75Nb 10.85O30 (KN) second phase was also observed in this film. Formation of the KN phase was due to the evaporation of Na2O. A homogeneous NKN phase was developed in the film grown at 300°C and annealed at 800°C under a Na2O atmosphere. This film exhibited the following good electric and dielectric properties: a high dielectric constant of 237.4 with a dissipation factor of 0.93% at 100 kHz, a low leakage current density of 1.0 × 10-8 A/cm2 at 0.1 MV/cm 2, and the high Pr and d33 values of 21.1 μC/cm2 and 64.5 pm/V, respectively.

Original languageEnglish
Pages (from-to)1970-1973
Number of pages4
JournalJournal of the American Ceramic Society
Volume94
Issue number7
DOIs
Publication statusPublished - 2011 Jul 1

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electrical property
Sputtering
Electric properties
substrate
Substrates
dielectric property
density current
Leakage currents
Dielectric properties
leakage
dissipation
Evaporation
Permittivity
Current density
evaporation
Crystalline materials
atmosphere
sodium oxide

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Growth behavior and electrical properties of a (Na0.5K 0.5)NbO3thin film deposited on a Pt/Ti/SiO2/Si substrate using RFmagnetron sputtering. / Kang, Lee Seung; Kim, Bo Yun; Seo, In Tae; Seong, Tae Geun; Kim, Jin Seong; Sun, Jong Woo; Paik, Dong Soo; Hwang, Inrok; Park, Bae Ho; Nahm, Sahn.

In: Journal of the American Ceramic Society, Vol. 94, No. 7, 01.07.2011, p. 1970-1973.

Research output: Contribution to journalArticle

Kang, Lee Seung ; Kim, Bo Yun ; Seo, In Tae ; Seong, Tae Geun ; Kim, Jin Seong ; Sun, Jong Woo ; Paik, Dong Soo ; Hwang, Inrok ; Park, Bae Ho ; Nahm, Sahn. / Growth behavior and electrical properties of a (Na0.5K 0.5)NbO3thin film deposited on a Pt/Ti/SiO2/Si substrate using RFmagnetron sputtering. In: Journal of the American Ceramic Society. 2011 ; Vol. 94, No. 7. pp. 1970-1973.
@article{1cf458eb7df841dc9038a4bf66517d42,
title = "Growth behavior and electrical properties of a (Na0.5K 0.5)NbO3thin film deposited on a Pt/Ti/SiO2/Si substrate using RFmagnetron sputtering",
abstract = "A crystalline (Na0.5K0.5)NbO3 (NKN) phase was formed for a film grown at 600°C, but a K5.75Nb 10.85O30 (KN) second phase was also observed in this film. Formation of the KN phase was due to the evaporation of Na2O. A homogeneous NKN phase was developed in the film grown at 300°C and annealed at 800°C under a Na2O atmosphere. This film exhibited the following good electric and dielectric properties: a high dielectric constant of 237.4 with a dissipation factor of 0.93{\%} at 100 kHz, a low leakage current density of 1.0 × 10-8 A/cm2 at 0.1 MV/cm 2, and the high Pr and d33 values of 21.1 μC/cm2 and 64.5 pm/V, respectively.",
author = "Kang, {Lee Seung} and Kim, {Bo Yun} and Seo, {In Tae} and Seong, {Tae Geun} and Kim, {Jin Seong} and Sun, {Jong Woo} and Paik, {Dong Soo} and Inrok Hwang and Park, {Bae Ho} and Sahn Nahm",
year = "2011",
month = "7",
day = "1",
doi = "10.1111/j.1551-2916.2011.04574.x",
language = "English",
volume = "94",
pages = "1970--1973",
journal = "Journal of the American Ceramic Society",
issn = "0002-7820",
publisher = "Wiley-Blackwell",
number = "7",

}

TY - JOUR

T1 - Growth behavior and electrical properties of a (Na0.5K 0.5)NbO3thin film deposited on a Pt/Ti/SiO2/Si substrate using RFmagnetron sputtering

AU - Kang, Lee Seung

AU - Kim, Bo Yun

AU - Seo, In Tae

AU - Seong, Tae Geun

AU - Kim, Jin Seong

AU - Sun, Jong Woo

AU - Paik, Dong Soo

AU - Hwang, Inrok

AU - Park, Bae Ho

AU - Nahm, Sahn

PY - 2011/7/1

Y1 - 2011/7/1

N2 - A crystalline (Na0.5K0.5)NbO3 (NKN) phase was formed for a film grown at 600°C, but a K5.75Nb 10.85O30 (KN) second phase was also observed in this film. Formation of the KN phase was due to the evaporation of Na2O. A homogeneous NKN phase was developed in the film grown at 300°C and annealed at 800°C under a Na2O atmosphere. This film exhibited the following good electric and dielectric properties: a high dielectric constant of 237.4 with a dissipation factor of 0.93% at 100 kHz, a low leakage current density of 1.0 × 10-8 A/cm2 at 0.1 MV/cm 2, and the high Pr and d33 values of 21.1 μC/cm2 and 64.5 pm/V, respectively.

AB - A crystalline (Na0.5K0.5)NbO3 (NKN) phase was formed for a film grown at 600°C, but a K5.75Nb 10.85O30 (KN) second phase was also observed in this film. Formation of the KN phase was due to the evaporation of Na2O. A homogeneous NKN phase was developed in the film grown at 300°C and annealed at 800°C under a Na2O atmosphere. This film exhibited the following good electric and dielectric properties: a high dielectric constant of 237.4 with a dissipation factor of 0.93% at 100 kHz, a low leakage current density of 1.0 × 10-8 A/cm2 at 0.1 MV/cm 2, and the high Pr and d33 values of 21.1 μC/cm2 and 64.5 pm/V, respectively.

UR - http://www.scopus.com/inward/record.url?scp=79960244315&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960244315&partnerID=8YFLogxK

U2 - 10.1111/j.1551-2916.2011.04574.x

DO - 10.1111/j.1551-2916.2011.04574.x

M3 - Article

VL - 94

SP - 1970

EP - 1973

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

SN - 0002-7820

IS - 7

ER -