Growth behavior and electrical properties of a (Na0.5K 0.5)NbO3thin film deposited on a Pt/Ti/SiO2/Si substrate using RFmagnetron sputtering

Lee Seung Kang, Bo Yun Kim, In Tae Seo, Tae Geun Seong, Jin Seong Kim, Jong Woo Sun, Dong Soo Paik, Inrok Hwang, Bae Ho Park, Sahn Nahm

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20 Citations (Scopus)


A crystalline (Na0.5K0.5)NbO3 (NKN) phase was formed for a film grown at 600°C, but a K5.75Nb 10.85O30 (KN) second phase was also observed in this film. Formation of the KN phase was due to the evaporation of Na2O. A homogeneous NKN phase was developed in the film grown at 300°C and annealed at 800°C under a Na2O atmosphere. This film exhibited the following good electric and dielectric properties: a high dielectric constant of 237.4 with a dissipation factor of 0.93% at 100 kHz, a low leakage current density of 1.0 × 10-8 A/cm2 at 0.1 MV/cm 2, and the high Pr and d33 values of 21.1 μC/cm2 and 64.5 pm/V, respectively.

Original languageEnglish
Pages (from-to)1970-1973
Number of pages4
JournalJournal of the American Ceramic Society
Issue number7
Publication statusPublished - 2011 Jul

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry


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