Growth behavior and field emission property of ZnO nanowire arrays on Au and Ag films

Sung Hyun Kim, Churl Seung Lee, Jeesun Kim, Jin Woo Cho, Young-geun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We propose a facile method to control the growth and areal density of zinc-oxide (ZnO) nanowire arrays using gold or silver films deposited on aluminum-doped ZnO (AZO) layers coated on glass substrates. Nanowires exceeding 5 μm in length grew on both the glass/AZO-layer and on the glass/AZO-layer/Au-film where the areal array density was controlled primarily by changing the annealing temperature. In contrast, the nanowire arrays grew only on the AZO surface but not on the Ag film owing to the formation of an Ag-oxide layer. We fabricated field emitter devices with density controlled ZnO nanowire arrays and low turn-on electric field of ∼6 V/μm and a field enhancement factor of up to 1188 were obtained with density controlled ZnO nanowire arrays.

Original languageEnglish
Article number092132
JournalAIP Advances
Volume3
Issue number9
DOIs
Publication statusPublished - 2013 Oct 21

Fingerprint

zinc oxides
field emission
nanowires
aluminum
glass
emitters
silver
gold
annealing
oxides
electric fields
augmentation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Growth behavior and field emission property of ZnO nanowire arrays on Au and Ag films. / Kim, Sung Hyun; Lee, Churl Seung; Kim, Jeesun; Cho, Jin Woo; Kim, Young-geun.

In: AIP Advances, Vol. 3, No. 9, 092132, 21.10.2013.

Research output: Contribution to journalArticle

@article{230330fc17ca454886e20ebb4e3b073b,
title = "Growth behavior and field emission property of ZnO nanowire arrays on Au and Ag films",
abstract = "We propose a facile method to control the growth and areal density of zinc-oxide (ZnO) nanowire arrays using gold or silver films deposited on aluminum-doped ZnO (AZO) layers coated on glass substrates. Nanowires exceeding 5 μm in length grew on both the glass/AZO-layer and on the glass/AZO-layer/Au-film where the areal array density was controlled primarily by changing the annealing temperature. In contrast, the nanowire arrays grew only on the AZO surface but not on the Ag film owing to the formation of an Ag-oxide layer. We fabricated field emitter devices with density controlled ZnO nanowire arrays and low turn-on electric field of ∼6 V/μm and a field enhancement factor of up to 1188 were obtained with density controlled ZnO nanowire arrays.",
author = "Kim, {Sung Hyun} and Lee, {Churl Seung} and Jeesun Kim and Cho, {Jin Woo} and Young-geun Kim",
year = "2013",
month = "10",
day = "21",
doi = "10.1063/1.4824311",
language = "English",
volume = "3",
journal = "AIP Advances",
issn = "2158-3226",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Growth behavior and field emission property of ZnO nanowire arrays on Au and Ag films

AU - Kim, Sung Hyun

AU - Lee, Churl Seung

AU - Kim, Jeesun

AU - Cho, Jin Woo

AU - Kim, Young-geun

PY - 2013/10/21

Y1 - 2013/10/21

N2 - We propose a facile method to control the growth and areal density of zinc-oxide (ZnO) nanowire arrays using gold or silver films deposited on aluminum-doped ZnO (AZO) layers coated on glass substrates. Nanowires exceeding 5 μm in length grew on both the glass/AZO-layer and on the glass/AZO-layer/Au-film where the areal array density was controlled primarily by changing the annealing temperature. In contrast, the nanowire arrays grew only on the AZO surface but not on the Ag film owing to the formation of an Ag-oxide layer. We fabricated field emitter devices with density controlled ZnO nanowire arrays and low turn-on electric field of ∼6 V/μm and a field enhancement factor of up to 1188 were obtained with density controlled ZnO nanowire arrays.

AB - We propose a facile method to control the growth and areal density of zinc-oxide (ZnO) nanowire arrays using gold or silver films deposited on aluminum-doped ZnO (AZO) layers coated on glass substrates. Nanowires exceeding 5 μm in length grew on both the glass/AZO-layer and on the glass/AZO-layer/Au-film where the areal array density was controlled primarily by changing the annealing temperature. In contrast, the nanowire arrays grew only on the AZO surface but not on the Ag film owing to the formation of an Ag-oxide layer. We fabricated field emitter devices with density controlled ZnO nanowire arrays and low turn-on electric field of ∼6 V/μm and a field enhancement factor of up to 1188 were obtained with density controlled ZnO nanowire arrays.

UR - http://www.scopus.com/inward/record.url?scp=84885607152&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885607152&partnerID=8YFLogxK

U2 - 10.1063/1.4824311

DO - 10.1063/1.4824311

M3 - Article

VL - 3

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 9

M1 - 092132

ER -