Growth behavior and thermally stable electrical properties of TiNbO5 nanosheet thin films grown using the electrophoretic method

Mir Im, Woong Hee Lee, Sang Hyo Kweon, Chong-Yun Kang, Sahn Nahm

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

TiNbO5 (TNO) thin films were deposited by electrophoresis at room temperature by using TNO nanosheets. These TNO films exhibited a large (001) interplanar distance (1.18 nm) owing to the presence of TBA+ between the TNO layers. The TBA+, which were used to synthesize the TNO nanosheets, were removed from the TNO film after annealing at 600 °C. Two types of structures were developed in the film annealed at 600 °C: type-1 and type-2, which revealed (001) interplanar distances of 0.52 and 0.71 nm, respectively. The TNO film annealed at 600 °C showed a dielectric constant of 48.5, low dielectric loss (0.02), and small leakage current density of 4.16 × 10−7 A/cm2 at 0.6 MV/cm. The dielectric properties were stable with respect to the film thickness and the applied electric field; the dielectric and insulation properties were maintained up to 300 °C. Therefore, TNO films are good candidates for high-temperature capacitors.

Original languageEnglish
JournalJournal of the European Ceramic Society
DOIs
Publication statusAccepted/In press - 2018 Jan 1

Fingerprint

Nanosheets
Electric properties
Thin films
Dielectric losses
Electrophoresis
Leakage currents
Dielectric properties
Film thickness
Insulation
Capacitors
Permittivity
Current density
Electric fields
Annealing
Temperature

Keywords

  • Electrophoresis
  • High temperature capacitor
  • Inorganic nanosheets
  • Robust dielectric
  • TiNbO film

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Growth behavior and thermally stable electrical properties of TiNbO5 nanosheet thin films grown using the electrophoretic method. / Im, Mir; Lee, Woong Hee; Kweon, Sang Hyo; Kang, Chong-Yun; Nahm, Sahn.

In: Journal of the European Ceramic Society, 01.01.2018.

Research output: Contribution to journalArticle

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AU - Nahm, Sahn

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N2 - TiNbO5 (TNO) thin films were deposited by electrophoresis at room temperature by using TNO− nanosheets. These TNO films exhibited a large (001) interplanar distance (1.18 nm) owing to the presence of TBA+ between the TNO layers. The TBA+, which were used to synthesize the TNO− nanosheets, were removed from the TNO film after annealing at 600 °C. Two types of structures were developed in the film annealed at 600 °C: type-1 and type-2, which revealed (001) interplanar distances of 0.52 and 0.71 nm, respectively. The TNO film annealed at 600 °C showed a dielectric constant of 48.5, low dielectric loss (0.02), and small leakage current density of 4.16 × 10−7 A/cm2 at 0.6 MV/cm. The dielectric properties were stable with respect to the film thickness and the applied electric field; the dielectric and insulation properties were maintained up to 300 °C. Therefore, TNO films are good candidates for high-temperature capacitors.

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