Growth behavior and thermally stable electrical properties of TiNbO5 nanosheet thin films grown using the electrophoretic method

Mir Im, Woong Hee Lee, Sang Hyo Kweon, Chong Yun Kang, Sahn Nahm

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


TiNbO5 (TNO) thin films were deposited by electrophoresis at room temperature by using TNO nanosheets. These TNO films exhibited a large (001) interplanar distance (1.18 nm) owing to the presence of TBA+ between the TNO layers. The TBA+, which were used to synthesize the TNO nanosheets, were removed from the TNO film after annealing at 600 °C. Two types of structures were developed in the film annealed at 600 °C: type-1 and type-2, which revealed (001) interplanar distances of 0.52 and 0.71 nm, respectively. The TNO film annealed at 600 °C showed a dielectric constant of 48.5, low dielectric loss (0.02), and small leakage current density of 4.16 × 10−7 A/cm2 at 0.6 MV/cm. The dielectric properties were stable with respect to the film thickness and the applied electric field; the dielectric and insulation properties were maintained up to 300 °C. Therefore, TNO films are good candidates for high-temperature capacitors.

Original languageEnglish
Pages (from-to)1149-1155
Number of pages7
JournalJournal of the European Ceramic Society
Issue number4
Publication statusPublished - 2019 Apr


  • Electrophoresis
  • High temperature capacitor
  • Inorganic nanosheets
  • Robust dielectric
  • TiNbO film

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry


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