Growth behaviors of GaN/Si heteroepitaxy with various terrace widths grown by the LEPS method

Eun A. Ko, Dong Wook Kim, Heon-Song, Kannappan Santhakumar, Jin Soo Kim, In-Hwan Lee, Byung Joon Baek, Cheul Ro Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Epilayers of GaN were grown on patterned Si (111) substrates of various terrace widths by means of metal organic chemical vapor deposition. The technique of lateral epitaxy on a patterned substrate used the growth of GaN epilayers from the periodic and parallel stripes that form as a result of the substrate etching. Silicon substrates were patterned for various terrace widths of 3 μm, 8 μm, and 18 μm. A low temperature AIN was used as a seed layer for the growth of a 1.5 μm thick GaN epilayer. The as-grown samples were characterized by using double-crystal X-ray diffractometry (DCXRD), photoluminescence and atomic force microscopy (AFM). From the DCXRD spectra, the full width at half maximum (FWHM) of the samples was found to decrease as the terrace width decreased. This behavior indicates that there is an improvement in the crystalline quality of the GaN epilayers as the terrace width decreases. The photoluminescence spectra reveal a decrease in the FWHM and an increase in the peak intensity as the terrace width decreases. This behavior indicates that there is an improvement in the optical quality of the GaN epilayer as the terrace width decreases. The atomic force micrographs reveal a dislocation-free homogeneous surface in the trench region compared to the terrace region with defects such as pits and dislocations. The results clearly show that GaN epilayers grown on a patterned Si substrate with a terrace width 3 μm have a good crystalline quality with minimal threading dislocation and excellent band edge emission.

Original languageEnglish
Pages (from-to)753-758
Number of pages6
JournalMetals and Materials International
Volume14
Issue number6
DOIs
Publication statusPublished - 2008 Dec 1
Externally publishedYes

Fingerprint

Epilayers
Epitaxial growth
Substrates
Full width at half maximum
X ray diffraction analysis
Photoluminescence
Crystalline materials
Organic Chemicals
Crystals
Organic chemicals
Silicon
Dislocations (crystals)
photoluminescence
Seed
Chemical vapor deposition
Etching
Atomic force microscopy
Metals
epitaxy
Defects

Keywords

  • AFM
  • GaN
  • MOCVD
  • Patterned Si substrate
  • PL
  • SEM

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

Cite this

Growth behaviors of GaN/Si heteroepitaxy with various terrace widths grown by the LEPS method. / Ko, Eun A.; Kim, Dong Wook; Heon-Song; Santhakumar, Kannappan; Kim, Jin Soo; Lee, In-Hwan; Baek, Byung Joon; Lee, Cheul Ro.

In: Metals and Materials International, Vol. 14, No. 6, 01.12.2008, p. 753-758.

Research output: Contribution to journalArticle

Ko, Eun A. ; Kim, Dong Wook ; Heon-Song ; Santhakumar, Kannappan ; Kim, Jin Soo ; Lee, In-Hwan ; Baek, Byung Joon ; Lee, Cheul Ro. / Growth behaviors of GaN/Si heteroepitaxy with various terrace widths grown by the LEPS method. In: Metals and Materials International. 2008 ; Vol. 14, No. 6. pp. 753-758.
@article{c4c3533b3fff4df2b728ab1d42b94cb6,
title = "Growth behaviors of GaN/Si heteroepitaxy with various terrace widths grown by the LEPS method",
abstract = "Epilayers of GaN were grown on patterned Si (111) substrates of various terrace widths by means of metal organic chemical vapor deposition. The technique of lateral epitaxy on a patterned substrate used the growth of GaN epilayers from the periodic and parallel stripes that form as a result of the substrate etching. Silicon substrates were patterned for various terrace widths of 3 μm, 8 μm, and 18 μm. A low temperature AIN was used as a seed layer for the growth of a 1.5 μm thick GaN epilayer. The as-grown samples were characterized by using double-crystal X-ray diffractometry (DCXRD), photoluminescence and atomic force microscopy (AFM). From the DCXRD spectra, the full width at half maximum (FWHM) of the samples was found to decrease as the terrace width decreased. This behavior indicates that there is an improvement in the crystalline quality of the GaN epilayers as the terrace width decreases. The photoluminescence spectra reveal a decrease in the FWHM and an increase in the peak intensity as the terrace width decreases. This behavior indicates that there is an improvement in the optical quality of the GaN epilayer as the terrace width decreases. The atomic force micrographs reveal a dislocation-free homogeneous surface in the trench region compared to the terrace region with defects such as pits and dislocations. The results clearly show that GaN epilayers grown on a patterned Si substrate with a terrace width 3 μm have a good crystalline quality with minimal threading dislocation and excellent band edge emission.",
keywords = "AFM, GaN, MOCVD, Patterned Si substrate, PL, SEM",
author = "Ko, {Eun A.} and Kim, {Dong Wook} and Heon-Song and Kannappan Santhakumar and Kim, {Jin Soo} and In-Hwan Lee and Baek, {Byung Joon} and Lee, {Cheul Ro}",
year = "2008",
month = "12",
day = "1",
doi = "10.1007/BF03027992",
language = "English",
volume = "14",
pages = "753--758",
journal = "Metals and Materials International",
issn = "1598-9623",
publisher = "Korean Institute of Metals and Materials",
number = "6",

}

TY - JOUR

T1 - Growth behaviors of GaN/Si heteroepitaxy with various terrace widths grown by the LEPS method

AU - Ko, Eun A.

AU - Kim, Dong Wook

AU - Heon-Song,

AU - Santhakumar, Kannappan

AU - Kim, Jin Soo

AU - Lee, In-Hwan

AU - Baek, Byung Joon

AU - Lee, Cheul Ro

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Epilayers of GaN were grown on patterned Si (111) substrates of various terrace widths by means of metal organic chemical vapor deposition. The technique of lateral epitaxy on a patterned substrate used the growth of GaN epilayers from the periodic and parallel stripes that form as a result of the substrate etching. Silicon substrates were patterned for various terrace widths of 3 μm, 8 μm, and 18 μm. A low temperature AIN was used as a seed layer for the growth of a 1.5 μm thick GaN epilayer. The as-grown samples were characterized by using double-crystal X-ray diffractometry (DCXRD), photoluminescence and atomic force microscopy (AFM). From the DCXRD spectra, the full width at half maximum (FWHM) of the samples was found to decrease as the terrace width decreased. This behavior indicates that there is an improvement in the crystalline quality of the GaN epilayers as the terrace width decreases. The photoluminescence spectra reveal a decrease in the FWHM and an increase in the peak intensity as the terrace width decreases. This behavior indicates that there is an improvement in the optical quality of the GaN epilayer as the terrace width decreases. The atomic force micrographs reveal a dislocation-free homogeneous surface in the trench region compared to the terrace region with defects such as pits and dislocations. The results clearly show that GaN epilayers grown on a patterned Si substrate with a terrace width 3 μm have a good crystalline quality with minimal threading dislocation and excellent band edge emission.

AB - Epilayers of GaN were grown on patterned Si (111) substrates of various terrace widths by means of metal organic chemical vapor deposition. The technique of lateral epitaxy on a patterned substrate used the growth of GaN epilayers from the periodic and parallel stripes that form as a result of the substrate etching. Silicon substrates were patterned for various terrace widths of 3 μm, 8 μm, and 18 μm. A low temperature AIN was used as a seed layer for the growth of a 1.5 μm thick GaN epilayer. The as-grown samples were characterized by using double-crystal X-ray diffractometry (DCXRD), photoluminescence and atomic force microscopy (AFM). From the DCXRD spectra, the full width at half maximum (FWHM) of the samples was found to decrease as the terrace width decreased. This behavior indicates that there is an improvement in the crystalline quality of the GaN epilayers as the terrace width decreases. The photoluminescence spectra reveal a decrease in the FWHM and an increase in the peak intensity as the terrace width decreases. This behavior indicates that there is an improvement in the optical quality of the GaN epilayer as the terrace width decreases. The atomic force micrographs reveal a dislocation-free homogeneous surface in the trench region compared to the terrace region with defects such as pits and dislocations. The results clearly show that GaN epilayers grown on a patterned Si substrate with a terrace width 3 μm have a good crystalline quality with minimal threading dislocation and excellent band edge emission.

KW - AFM

KW - GaN

KW - MOCVD

KW - Patterned Si substrate

KW - PL

KW - SEM

UR - http://www.scopus.com/inward/record.url?scp=58149242364&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149242364&partnerID=8YFLogxK

U2 - 10.1007/BF03027992

DO - 10.1007/BF03027992

M3 - Article

AN - SCOPUS:58149242364

VL - 14

SP - 753

EP - 758

JO - Metals and Materials International

JF - Metals and Materials International

SN - 1598-9623

IS - 6

ER -