Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates

Hyun Gi Hong, Tae Yeon Seong, Seonghoon Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ZnO nanowires have been grown on [001] silicon, c-sapphire and micro-patterned (0001) GaN substrates, which are characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. It is shown that the crystallinity of the nanowires sensitively depends on the types of the substrates. The ZnO nanowires have good optical and structural properties.

Original languageEnglish
Title of host publicationIEEE International Symposium on Compound Semiconductors, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages121-122
Number of pages2
Volume2003-January
ISBN (Print)0780378202
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: 2003 Aug 252003 Aug 27

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period03/8/2503/8/27

Fingerprint

Aluminum Oxide
Silicon
Sapphire
Nanowires
Substrates
Structural properties
Photoluminescence
Optical properties
X ray diffraction
Scanning electron microscopy

Keywords

  • Crystallization
  • Electron optics
  • Gallium nitride
  • Nanowires
  • Optical diffraction
  • Photoluminescence
  • Scanning electron microscopy
  • Silicon
  • X-ray diffraction
  • Zinc oxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Hong, H. G., Seong, T. Y., & Lee, S. (2003). Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates. In IEEE International Symposium on Compound Semiconductors, Proceedings (Vol. 2003-January, pp. 121-122). [1239936] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239936

Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates. / Hong, Hyun Gi; Seong, Tae Yeon; Lee, Seonghoon.

IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 121-122 1239936.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hong, HG, Seong, TY & Lee, S 2003, Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates. in IEEE International Symposium on Compound Semiconductors, Proceedings. vol. 2003-January, 1239936, Institute of Electrical and Electronics Engineers Inc., pp. 121-122, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 03/8/25. https://doi.org/10.1109/ISCS.2003.1239936
Hong HG, Seong TY, Lee S. Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates. In IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January. Institute of Electrical and Electronics Engineers Inc. 2003. p. 121-122. 1239936 https://doi.org/10.1109/ISCS.2003.1239936
Hong, Hyun Gi ; Seong, Tae Yeon ; Lee, Seonghoon. / Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates. IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. pp. 121-122
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