Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates

Hyun Gi Hong; Tae Yeon Seong; Seonghoon Lee

doi:10.1109/ISCS.2003.1239936

Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates

Hyun Gi Hong, Tae Yeon Seong, Seonghoon Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

ZnO nanowires have been grown on [001] silicon, c-sapphire and micro-patterned (0001) GaN substrates, which are characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. It is shown that the crystallinity of the nanowires sensitively depends on the types of the substrates. The ZnO nanowires have good optical and structural properties.

Original language	English
Title of host publication	IEEE International Symposium on Compound Semiconductors, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	121-122
Number of pages	2
Volume	2003-January
ISBN (Print)	0780378202
DOIs	https://doi.org/10.1109/ISCS.2003.1239936
Publication status	Published - 2003
Externally published	Yes
Event	2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: 2003 Aug 25 → 2003 Aug 27

Other

Other	2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	03/8/25 → 03/8/27

Keywords

Crystallization
Electron optics
Gallium nitride
Nanowires
Optical diffraction
Photoluminescence
Scanning electron microscopy
Silicon
X-ray diffraction
Zinc oxide

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/ISCS.2003.1239936

Cite this

Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates. / Hong, Hyun Gi; Seong, Tae Yeon; Lee, Seonghoon.

IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 121-122 1239936.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hong, HG, Seong, TY & Lee, S 2003, Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates. in IEEE International Symposium on Compound Semiconductors, Proceedings. vol. 2003-January, 1239936, Institute of Electrical and Electronics Engineers Inc., pp. 121-122, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 03/8/25. https://doi.org/10.1109/ISCS.2003.1239936

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title = "Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates",

abstract = "ZnO nanowires have been grown on [001] silicon, c-sapphire and micro-patterned (0001) GaN substrates, which are characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. It is shown that the crystallinity of the nanowires sensitively depends on the types of the substrates. The ZnO nanowires have good optical and structural properties.",

keywords = "Crystallization, Electron optics, Gallium nitride, Nanowires, Optical diffraction, Photoluminescence, Scanning electron microscopy, Silicon, X-ray diffraction, Zinc oxide",

author = "Hong, {Hyun Gi} and Seong, {Tae Yeon} and Seonghoon Lee",

year = "2003",

doi = "10.1109/ISCS.2003.1239936",

language = "English",

isbn = "0780378202",

volume = "2003-January",

pages = "121--122",

booktitle = "IEEE International Symposium on Compound Semiconductors, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",

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AU - Hong, Hyun Gi

AU - Seong, Tae Yeon

AU - Lee, Seonghoon

PY - 2003

Y1 - 2003

N2 - ZnO nanowires have been grown on [001] silicon, c-sapphire and micro-patterned (0001) GaN substrates, which are characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. It is shown that the crystallinity of the nanowires sensitively depends on the types of the substrates. The ZnO nanowires have good optical and structural properties.

AB - ZnO nanowires have been grown on [001] silicon, c-sapphire and micro-patterned (0001) GaN substrates, which are characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. It is shown that the crystallinity of the nanowires sensitively depends on the types of the substrates. The ZnO nanowires have good optical and structural properties.

KW - Crystallization

KW - Electron optics

KW - Gallium nitride

KW - Nanowires

KW - Optical diffraction

KW - Photoluminescence

KW - Scanning electron microscopy

KW - Silicon

KW - X-ray diffraction

KW - Zinc oxide

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U2 - 10.1109/ISCS.2003.1239936

DO - 10.1109/ISCS.2003.1239936

M3 - Conference contribution

AN - SCOPUS:84943522529

SN - 0780378202

VL - 2003-January

SP - 121

EP - 122

BT - IEEE International Symposium on Compound Semiconductors, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 International Symposium on Compound Semiconductors, ISCS 2003

Y2 - 25 August 2003 through 27 August 2003

ER -

Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates

Abstract

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Keywords

ASJC Scopus subject areas

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