Growth kinetics of W5Si3 layer in WSi2/W system

Kyung Hwan Lee, Jin Kook Yoon, Jong Kwon Lee, Jung Mann Doh, Kyung Tae Hong, Wooyoung Yoon

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Growth kinetics of the W5Si3 layer in the WSi2/W diffusion couple was investigated using optical microscopy, field-emission scanning electron microscopy, cross-sectional transmission electron microscopy, and X-ray diffraction. The 62 μm WSi2/0.3 μm-W5Si3/W diffusion couple was made by chemical vapor deposition (CVD) of Si on a W substrate. When the diffusion couple was annealed at temperatures between 1300 and 1500 °C in an argon atmosphere, the W5Si3 layer was simultaneously formed both at the surface of the WSi2 layer and at the interface between the WSi2 layer and the W substrate. The W5Si3 layer observed at the surface of WSi2 layer was formed by loss of Si released from the decomposition of WSi2 phase into the W5Si3 and Si phases. The growth kinetics of W5Si3 layer formed at the interface between the WSi2 layer and the W substrate obeyed a parabolic rate law, indicating the diffusion-controlled growth. From the change of columnar diameter and texture of W5Si3 grains, the dominant diffusion element and growth mechanism of the W5Si3 layer was found. The integrated interdiffusion coefficients in the W5Si3 phase were determined.

Original languageEnglish
Pages (from-to)146-153
Number of pages8
JournalSurface and Coatings Technology
Volume187
Issue number2-3
DOIs
Publication statusPublished - 2004 Oct 22

Fingerprint

Growth kinetics
kinetics
Substrates
Argon
Field emission
Optical microscopy
Chemical vapor deposition
Textures
Transmission electron microscopy
Decomposition
X ray diffraction
Scanning electron microscopy
field emission
textures
argon
vapor deposition
microscopy
decomposition
atmospheres
transmission electron microscopy

Keywords

  • Diffusion and phase transformation
  • Growth kinetics
  • Tungsten
  • W-silicides

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Lee, K. H., Yoon, J. K., Lee, J. K., Doh, J. M., Hong, K. T., & Yoon, W. (2004). Growth kinetics of W5Si3 layer in WSi2/W system. Surface and Coatings Technology, 187(2-3), 146-153. https://doi.org/10.1016/j.surfcoat.2004.02.039

Growth kinetics of W5Si3 layer in WSi2/W system. / Lee, Kyung Hwan; Yoon, Jin Kook; Lee, Jong Kwon; Doh, Jung Mann; Hong, Kyung Tae; Yoon, Wooyoung.

In: Surface and Coatings Technology, Vol. 187, No. 2-3, 22.10.2004, p. 146-153.

Research output: Contribution to journalArticle

Lee, KH, Yoon, JK, Lee, JK, Doh, JM, Hong, KT & Yoon, W 2004, 'Growth kinetics of W5Si3 layer in WSi2/W system', Surface and Coatings Technology, vol. 187, no. 2-3, pp. 146-153. https://doi.org/10.1016/j.surfcoat.2004.02.039
Lee, Kyung Hwan ; Yoon, Jin Kook ; Lee, Jong Kwon ; Doh, Jung Mann ; Hong, Kyung Tae ; Yoon, Wooyoung. / Growth kinetics of W5Si3 layer in WSi2/W system. In: Surface and Coatings Technology. 2004 ; Vol. 187, No. 2-3. pp. 146-153.
@article{d8e651dbc90442128d50febb7e18049f,
title = "Growth kinetics of W5Si3 layer in WSi2/W system",
abstract = "Growth kinetics of the W5Si3 layer in the WSi2/W diffusion couple was investigated using optical microscopy, field-emission scanning electron microscopy, cross-sectional transmission electron microscopy, and X-ray diffraction. The 62 μm WSi2/0.3 μm-W5Si3/W diffusion couple was made by chemical vapor deposition (CVD) of Si on a W substrate. When the diffusion couple was annealed at temperatures between 1300 and 1500 °C in an argon atmosphere, the W5Si3 layer was simultaneously formed both at the surface of the WSi2 layer and at the interface between the WSi2 layer and the W substrate. The W5Si3 layer observed at the surface of WSi2 layer was formed by loss of Si released from the decomposition of WSi2 phase into the W5Si3 and Si phases. The growth kinetics of W5Si3 layer formed at the interface between the WSi2 layer and the W substrate obeyed a parabolic rate law, indicating the diffusion-controlled growth. From the change of columnar diameter and texture of W5Si3 grains, the dominant diffusion element and growth mechanism of the W5Si3 layer was found. The integrated interdiffusion coefficients in the W5Si3 phase were determined.",
keywords = "Diffusion and phase transformation, Growth kinetics, Tungsten, W-silicides",
author = "Lee, {Kyung Hwan} and Yoon, {Jin Kook} and Lee, {Jong Kwon} and Doh, {Jung Mann} and Hong, {Kyung Tae} and Wooyoung Yoon",
year = "2004",
month = "10",
day = "22",
doi = "10.1016/j.surfcoat.2004.02.039",
language = "English",
volume = "187",
pages = "146--153",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",
number = "2-3",

}

TY - JOUR

T1 - Growth kinetics of W5Si3 layer in WSi2/W system

AU - Lee, Kyung Hwan

AU - Yoon, Jin Kook

AU - Lee, Jong Kwon

AU - Doh, Jung Mann

AU - Hong, Kyung Tae

AU - Yoon, Wooyoung

PY - 2004/10/22

Y1 - 2004/10/22

N2 - Growth kinetics of the W5Si3 layer in the WSi2/W diffusion couple was investigated using optical microscopy, field-emission scanning electron microscopy, cross-sectional transmission electron microscopy, and X-ray diffraction. The 62 μm WSi2/0.3 μm-W5Si3/W diffusion couple was made by chemical vapor deposition (CVD) of Si on a W substrate. When the diffusion couple was annealed at temperatures between 1300 and 1500 °C in an argon atmosphere, the W5Si3 layer was simultaneously formed both at the surface of the WSi2 layer and at the interface between the WSi2 layer and the W substrate. The W5Si3 layer observed at the surface of WSi2 layer was formed by loss of Si released from the decomposition of WSi2 phase into the W5Si3 and Si phases. The growth kinetics of W5Si3 layer formed at the interface between the WSi2 layer and the W substrate obeyed a parabolic rate law, indicating the diffusion-controlled growth. From the change of columnar diameter and texture of W5Si3 grains, the dominant diffusion element and growth mechanism of the W5Si3 layer was found. The integrated interdiffusion coefficients in the W5Si3 phase were determined.

AB - Growth kinetics of the W5Si3 layer in the WSi2/W diffusion couple was investigated using optical microscopy, field-emission scanning electron microscopy, cross-sectional transmission electron microscopy, and X-ray diffraction. The 62 μm WSi2/0.3 μm-W5Si3/W diffusion couple was made by chemical vapor deposition (CVD) of Si on a W substrate. When the diffusion couple was annealed at temperatures between 1300 and 1500 °C in an argon atmosphere, the W5Si3 layer was simultaneously formed both at the surface of the WSi2 layer and at the interface between the WSi2 layer and the W substrate. The W5Si3 layer observed at the surface of WSi2 layer was formed by loss of Si released from the decomposition of WSi2 phase into the W5Si3 and Si phases. The growth kinetics of W5Si3 layer formed at the interface between the WSi2 layer and the W substrate obeyed a parabolic rate law, indicating the diffusion-controlled growth. From the change of columnar diameter and texture of W5Si3 grains, the dominant diffusion element and growth mechanism of the W5Si3 layer was found. The integrated interdiffusion coefficients in the W5Si3 phase were determined.

KW - Diffusion and phase transformation

KW - Growth kinetics

KW - Tungsten

KW - W-silicides

UR - http://www.scopus.com/inward/record.url?scp=4644233995&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4644233995&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2004.02.039

DO - 10.1016/j.surfcoat.2004.02.039

M3 - Article

AN - SCOPUS:4644233995

VL - 187

SP - 146

EP - 153

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - 2-3

ER -