Growth mechanism of vertically aligned carbon nanotubes on silicon substrates

Young Chul Choi, Dae Woon Kim, Tae Jae Lee, Cheol Jin Lee, Young Hee Lee

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

We have synthesized vertically aligned carbon nanotubes by thermal chemical vapor deposition using C2H2 gas on a large area of transition metal-coated Si substrates. It is observed that control of nucleation sites of transition metals deposited on Si substrates by a dipping in a HF solution and/or NH3 pretreatment is a crucial step for the growth of vertically aligned carbon nanotubes prior to the reaction of C2H2 gas. We show that the transition metals play as nucleation seeds and lead to further cap growth by forming a metal cap at the end of nanotubes.

Original languageEnglish
Pages (from-to)81-86
Number of pages6
JournalSynthetic Metals
Volume117
Issue number1-3
DOIs
Publication statusPublished - 2001 Feb 15
Externally publishedYes

Fingerprint

Carbon Nanotubes
Silicon
Transition metals
Carbon nanotubes
transition metals
carbon nanotubes
caps
silicon
Nucleation
Substrates
Gases
nucleation
dipping
gases
pretreatment
Nanotubes
Seed
seeds
Chemical vapor deposition
nanotubes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Polymers and Plastics

Cite this

Growth mechanism of vertically aligned carbon nanotubes on silicon substrates. / Choi, Young Chul; Kim, Dae Woon; Lee, Tae Jae; Lee, Cheol Jin; Lee, Young Hee.

In: Synthetic Metals, Vol. 117, No. 1-3, 15.02.2001, p. 81-86.

Research output: Contribution to journalArticle

Choi, Young Chul ; Kim, Dae Woon ; Lee, Tae Jae ; Lee, Cheol Jin ; Lee, Young Hee. / Growth mechanism of vertically aligned carbon nanotubes on silicon substrates. In: Synthetic Metals. 2001 ; Vol. 117, No. 1-3. pp. 81-86.
@article{4be043f2d4674606bba605d0b9110cdf,
title = "Growth mechanism of vertically aligned carbon nanotubes on silicon substrates",
abstract = "We have synthesized vertically aligned carbon nanotubes by thermal chemical vapor deposition using C2H2 gas on a large area of transition metal-coated Si substrates. It is observed that control of nucleation sites of transition metals deposited on Si substrates by a dipping in a HF solution and/or NH3 pretreatment is a crucial step for the growth of vertically aligned carbon nanotubes prior to the reaction of C2H2 gas. We show that the transition metals play as nucleation seeds and lead to further cap growth by forming a metal cap at the end of nanotubes.",
author = "Choi, {Young Chul} and Kim, {Dae Woon} and Lee, {Tae Jae} and Lee, {Cheol Jin} and Lee, {Young Hee}",
year = "2001",
month = "2",
day = "15",
doi = "10.1016/S0379-6779(00)00542-7",
language = "English",
volume = "117",
pages = "81--86",
journal = "Synthetic Metals",
issn = "0379-6779",
publisher = "Elsevier BV",
number = "1-3",

}

TY - JOUR

T1 - Growth mechanism of vertically aligned carbon nanotubes on silicon substrates

AU - Choi, Young Chul

AU - Kim, Dae Woon

AU - Lee, Tae Jae

AU - Lee, Cheol Jin

AU - Lee, Young Hee

PY - 2001/2/15

Y1 - 2001/2/15

N2 - We have synthesized vertically aligned carbon nanotubes by thermal chemical vapor deposition using C2H2 gas on a large area of transition metal-coated Si substrates. It is observed that control of nucleation sites of transition metals deposited on Si substrates by a dipping in a HF solution and/or NH3 pretreatment is a crucial step for the growth of vertically aligned carbon nanotubes prior to the reaction of C2H2 gas. We show that the transition metals play as nucleation seeds and lead to further cap growth by forming a metal cap at the end of nanotubes.

AB - We have synthesized vertically aligned carbon nanotubes by thermal chemical vapor deposition using C2H2 gas on a large area of transition metal-coated Si substrates. It is observed that control of nucleation sites of transition metals deposited on Si substrates by a dipping in a HF solution and/or NH3 pretreatment is a crucial step for the growth of vertically aligned carbon nanotubes prior to the reaction of C2H2 gas. We show that the transition metals play as nucleation seeds and lead to further cap growth by forming a metal cap at the end of nanotubes.

UR - http://www.scopus.com/inward/record.url?scp=0035247385&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035247385&partnerID=8YFLogxK

U2 - 10.1016/S0379-6779(00)00542-7

DO - 10.1016/S0379-6779(00)00542-7

M3 - Article

AN - SCOPUS:0035247385

VL - 117

SP - 81

EP - 86

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 1-3

ER -