Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(1 0 0) substrate

Y. K. Noh; S. R. Park; M. D. Kim; Y. J. Kwon; J. E. Oh; Y. H. Kim; J. Y. Lee; S. G. Kim; K. S. Chung; T. G. Kim

doi:10.1016/j.jcrysgro.2006.11.187

Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(1 0 0) substrate

Y. K. Noh, S. R. Park, M. D. Kim, Y. J. Kwon, J. E. Oh, Y. H. Kim, J. Y. Lee, S. G. Kim, K. S. Chung, T. G. Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The growth of AlSb quantum dots (QDs) on Si(1 0 0) substrates by molecular beam epitaxy (MBE) was investigated using reflection high-energy electron diffraction and atomic force microscopy (AFM), with varying the growth rate and Sb₄/Al flux ratio. The thickness of the AlSb wetting layer (WL) was found to be independent of the Sb₄/Al flux ratio and AlSb growth rate. At 540 °C, the thickness of the AlSb WL was about 0.3 monolayer regardless of the growth rate and flux ratio. AFM images showed that the size and density of AlSb QDs strongly depended on the growth rate and flux ratio. These results provide important information on the formation process of AlSb QDs on Si substrates.

Original language	English
Pages (from-to)	244-247
Number of pages	4
Journal	Journal of Crystal Growth
Volume	301-302
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.11.187
Publication status	Published - 2007 Apr

Keywords

A1. Atomic force microscopy
A1. Reflection high-energy electron diffraction
A3. Molecular beam epitaxy
B1. Antimonides
B2. Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2006.11.187

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@article{923ca7a5f68d4f3887d99e63efbd0c32,

title = "Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(1 0 0) substrate",

abstract = "The growth of AlSb quantum dots (QDs) on Si(1 0 0) substrates by molecular beam epitaxy (MBE) was investigated using reflection high-energy electron diffraction and atomic force microscopy (AFM), with varying the growth rate and Sb4/Al flux ratio. The thickness of the AlSb wetting layer (WL) was found to be independent of the Sb4/Al flux ratio and AlSb growth rate. At 540 °C, the thickness of the AlSb WL was about 0.3 monolayer regardless of the growth rate and flux ratio. AFM images showed that the size and density of AlSb QDs strongly depended on the growth rate and flux ratio. These results provide important information on the formation process of AlSb QDs on Si substrates.",

keywords = "A1. Atomic force microscopy, A1. Reflection high-energy electron diffraction, A3. Molecular beam epitaxy, B1. Antimonides, B2. Semiconducting III-V materials",

author = "Noh, {Y. K.} and Park, {S. R.} and Kim, {M. D.} and Kwon, {Y. J.} and Oh, {J. E.} and Kim, {Y. H.} and Lee, {J. Y.} and Kim, {S. G.} and Chung, {K. S.} and Kim, {T. G.}",

note = "Funding Information: This work was supported by the Basic Research Program of the Korea Science & Engineering Foundation (Grant No. R01-2006-000-10874-0/M10503000169-06M0300-16900), and the Terabit Nano Device (TND) of Frontier-21 program sponsored by the Korea Ministry of Science and Technology, and was partially supported by the Quantum Functional Semiconductor Research Center at Dongguk University.",

year = "2007",

month = apr,

doi = "10.1016/j.jcrysgro.2006.11.187",

language = "English",

volume = "301-302",

pages = "244--247",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "SPEC. ISS.",

}

TY - JOUR

T1 - Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(1 0 0) substrate

AU - Noh, Y. K.

AU - Park, S. R.

AU - Kim, M. D.

AU - Kwon, Y. J.

AU - Oh, J. E.

AU - Kim, Y. H.

AU - Lee, J. Y.

AU - Kim, S. G.

AU - Chung, K. S.

AU - Kim, T. G.

N1 - Funding Information: This work was supported by the Basic Research Program of the Korea Science & Engineering Foundation (Grant No. R01-2006-000-10874-0/M10503000169-06M0300-16900), and the Terabit Nano Device (TND) of Frontier-21 program sponsored by the Korea Ministry of Science and Technology, and was partially supported by the Quantum Functional Semiconductor Research Center at Dongguk University.

PY - 2007/4

Y1 - 2007/4

N2 - The growth of AlSb quantum dots (QDs) on Si(1 0 0) substrates by molecular beam epitaxy (MBE) was investigated using reflection high-energy electron diffraction and atomic force microscopy (AFM), with varying the growth rate and Sb4/Al flux ratio. The thickness of the AlSb wetting layer (WL) was found to be independent of the Sb4/Al flux ratio and AlSb growth rate. At 540 °C, the thickness of the AlSb WL was about 0.3 monolayer regardless of the growth rate and flux ratio. AFM images showed that the size and density of AlSb QDs strongly depended on the growth rate and flux ratio. These results provide important information on the formation process of AlSb QDs on Si substrates.

AB - The growth of AlSb quantum dots (QDs) on Si(1 0 0) substrates by molecular beam epitaxy (MBE) was investigated using reflection high-energy electron diffraction and atomic force microscopy (AFM), with varying the growth rate and Sb4/Al flux ratio. The thickness of the AlSb wetting layer (WL) was found to be independent of the Sb4/Al flux ratio and AlSb growth rate. At 540 °C, the thickness of the AlSb WL was about 0.3 monolayer regardless of the growth rate and flux ratio. AFM images showed that the size and density of AlSb QDs strongly depended on the growth rate and flux ratio. These results provide important information on the formation process of AlSb QDs on Si substrates.

KW - A1. Atomic force microscopy

KW - A1. Reflection high-energy electron diffraction

KW - A3. Molecular beam epitaxy

KW - B1. Antimonides

KW - B2. Semiconducting III-V materials

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U2 - 10.1016/j.jcrysgro.2006.11.187

DO - 10.1016/j.jcrysgro.2006.11.187

M3 - Article

AN - SCOPUS:33947422098

SN - 0022-0248

VL - 301-302

SP - 244

EP - 247

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - SPEC. ISS.

ER -

Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(1 0 0) substrate

Abstract

Keywords

ASJC Scopus subject areas

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