Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process

Jin B. Lee, Chel Jong Choi, Tae Yeon Seong

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report on the growth of NiSi2-catalyzed amorphous SiO 2 nanowires by rapid-thermal-annealing of Ni(40 nm)/poly-Si(60 nm)/SiO2(110 nm)/undoped Si substrate structures at 900 °C in N2 ambient. The diameter of the nanowires is dependent on the diameter of the NiSi2 catalyst particles; the former is about 16-45% smaller than the later. Considering the presence of the nanoparticles located at the tip of the nanowires, the growth behavior of the a-SiO2 nanowires is described in terms of the generation of SiO vapor and the VLS mechanism.

Original languageEnglish
Pages (from-to)199-202
Number of pages4
JournalCurrent Applied Physics
Volume11
Issue number2
DOIs
Publication statusPublished - 2011 Mar 1

Fingerprint

Silicon Dioxide
Nanowires
nanowires
Silica
Nickel
nickel
Annealing
silicon dioxide
catalysts
Catalysts
annealing
Rapid thermal annealing
Polysilicon
Vapors
vapors
Nanoparticles
nanoparticles
Hot Temperature
nickel silicide
Substrates

Keywords

  • Nickel silicide
  • Rapid-thermal-annealing
  • Silica nanowires

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process. / Lee, Jin B.; Choi, Chel Jong; Seong, Tae Yeon.

In: Current Applied Physics, Vol. 11, No. 2, 01.03.2011, p. 199-202.

Research output: Contribution to journalArticle

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