Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process

Jin Bok Lee; Chel Jong Choi; Tae Yeon Seong

doi:10.1016/j.cap.2010.07.006

Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process

Jin Bok Lee, Chel Jong Choi, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report on the growth of NiSi₂-catalyzed amorphous SiO ₂ nanowires by rapid-thermal-annealing of Ni(40 nm)/poly-Si(60 nm)/SiO₂(110 nm)/undoped Si substrate structures at 900 °C in N₂ ambient. The diameter of the nanowires is dependent on the diameter of the NiSi₂ catalyst particles; the former is about 16-45% smaller than the later. Considering the presence of the nanoparticles located at the tip of the nanowires, the growth behavior of the a-SiO₂ nanowires is described in terms of the generation of SiO vapor and the VLS mechanism.

Original language	English
Pages (from-to)	199-202
Number of pages	4
Journal	Current Applied Physics
Volume	11
Issue number	2
DOIs	https://doi.org/10.1016/j.cap.2010.07.006
Publication status	Published - 2011 Mar

Keywords

Nickel silicide
Rapid-thermal-annealing
Silica nanowires

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

Access to Document

10.1016/j.cap.2010.07.006

Cite this

@article{7035528864bd45fdbec7cdf575f7ad0e,

title = "Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process",

abstract = "We report on the growth of NiSi2-catalyzed amorphous SiO 2 nanowires by rapid-thermal-annealing of Ni(40 nm)/poly-Si(60 nm)/SiO2(110 nm)/undoped Si substrate structures at 900 °C in N2 ambient. The diameter of the nanowires is dependent on the diameter of the NiSi2 catalyst particles; the former is about 16-45% smaller than the later. Considering the presence of the nanoparticles located at the tip of the nanowires, the growth behavior of the a-SiO2 nanowires is described in terms of the generation of SiO vapor and the VLS mechanism.",

keywords = "Nickel silicide, Rapid-thermal-annealing, Silica nanowires",

author = "Lee, {Jin Bok} and Choi, {Chel Jong} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by Priority Research Center Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) (2009-0094033) and World Class University program through the NRF funded by the MEST (R33-2008-000-10025-0) .",

year = "2011",

month = mar,

doi = "10.1016/j.cap.2010.07.006",

language = "English",

volume = "11",

pages = "199--202",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process

AU - Lee, Jin Bok

AU - Choi, Chel Jong

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by Priority Research Center Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) (2009-0094033) and World Class University program through the NRF funded by the MEST (R33-2008-000-10025-0) .

PY - 2011/3

Y1 - 2011/3

N2 - We report on the growth of NiSi2-catalyzed amorphous SiO 2 nanowires by rapid-thermal-annealing of Ni(40 nm)/poly-Si(60 nm)/SiO2(110 nm)/undoped Si substrate structures at 900 °C in N2 ambient. The diameter of the nanowires is dependent on the diameter of the NiSi2 catalyst particles; the former is about 16-45% smaller than the later. Considering the presence of the nanoparticles located at the tip of the nanowires, the growth behavior of the a-SiO2 nanowires is described in terms of the generation of SiO vapor and the VLS mechanism.

AB - We report on the growth of NiSi2-catalyzed amorphous SiO 2 nanowires by rapid-thermal-annealing of Ni(40 nm)/poly-Si(60 nm)/SiO2(110 nm)/undoped Si substrate structures at 900 °C in N2 ambient. The diameter of the nanowires is dependent on the diameter of the NiSi2 catalyst particles; the former is about 16-45% smaller than the later. Considering the presence of the nanoparticles located at the tip of the nanowires, the growth behavior of the a-SiO2 nanowires is described in terms of the generation of SiO vapor and the VLS mechanism.

KW - Nickel silicide

KW - Rapid-thermal-annealing

KW - Silica nanowires

UR - http://www.scopus.com/inward/record.url?scp=78649911827&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2010.07.006

DO - 10.1016/j.cap.2010.07.006

M3 - Article

AN - SCOPUS:78649911827

SN - 1567-1739

VL - 11

SP - 199

EP - 202

JO - Current Applied Physics

JF - Current Applied Physics

IS - 2

ER -

Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this