Growth of Boron-doped-ZnO by RF magnetron sputtering for CIGS solar cells

Jae Sung Hur, Jihye Kim, Samseok Jang, Jung Bin Song, Dong Jin Byun, Chang Sik Son, Jae Ho Yun, Kyung Hoon Yoon

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The cell performance of CuIn1-x Gax Se2 (CIGS) thin-film solar cells fabricated using boron-doped ZnO window layers was evaluated. Boron-doped ZnO was deposited by RF magnetron sputtering using a zinc-oxide target containing 3 wt.% B2O3. Its resistivity was 1.36 × 10-2 Ω·cm and its transmittance was 85 ∼ 89 % in the wavelength range from 400 nm to 1000 nm. The transmittance was higher in the near-infrared region than in the other regions. Thus, boron-doped ZnO thin films would be suitable for use as transparent window layers of CIGS solar cells having a higher quantum efficiency on the near-infrared region. The FF and the conversion efficiency were obtained from the J-V measurements and their values were 0.42 and 8.15 %, respectively.

Original languageEnglish
Pages (from-to)442-445
Number of pages4
JournalJournal of the Korean Physical Society
Volume53
Issue number1
Publication statusPublished - 2008 Jul 1

Fingerprint

magnetron sputtering
boron
solar cells
transmittance
thin films
zinc oxides
quantum efficiency
electrical resistivity
cells
wavelengths

Keywords

  • B-doped ZnO
  • CIGS solar cell
  • Transparent conductive oxide (TCO)

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Hur, J. S., Kim, J., Jang, S., Song, J. B., Byun, D. J., Son, C. S., ... Yoon, K. H. (2008). Growth of Boron-doped-ZnO by RF magnetron sputtering for CIGS solar cells. Journal of the Korean Physical Society, 53(1), 442-445.

Growth of Boron-doped-ZnO by RF magnetron sputtering for CIGS solar cells. / Hur, Jae Sung; Kim, Jihye; Jang, Samseok; Song, Jung Bin; Byun, Dong Jin; Son, Chang Sik; Yun, Jae Ho; Yoon, Kyung Hoon.

In: Journal of the Korean Physical Society, Vol. 53, No. 1, 01.07.2008, p. 442-445.

Research output: Contribution to journalArticle

Hur, JS, Kim, J, Jang, S, Song, JB, Byun, DJ, Son, CS, Yun, JH & Yoon, KH 2008, 'Growth of Boron-doped-ZnO by RF magnetron sputtering for CIGS solar cells', Journal of the Korean Physical Society, vol. 53, no. 1, pp. 442-445.
Hur, Jae Sung ; Kim, Jihye ; Jang, Samseok ; Song, Jung Bin ; Byun, Dong Jin ; Son, Chang Sik ; Yun, Jae Ho ; Yoon, Kyung Hoon. / Growth of Boron-doped-ZnO by RF magnetron sputtering for CIGS solar cells. In: Journal of the Korean Physical Society. 2008 ; Vol. 53, No. 1. pp. 442-445.
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AB - The cell performance of CuIn1-x Gax Se2 (CIGS) thin-film solar cells fabricated using boron-doped ZnO window layers was evaluated. Boron-doped ZnO was deposited by RF magnetron sputtering using a zinc-oxide target containing 3 wt.% B2O3. Its resistivity was 1.36 × 10-2 Ω·cm and its transmittance was 85 ∼ 89 % in the wavelength range from 400 nm to 1000 nm. The transmittance was higher in the near-infrared region than in the other regions. Thus, boron-doped ZnO thin films would be suitable for use as transparent window layers of CIGS solar cells having a higher quantum efficiency on the near-infrared region. The FF and the conversion efficiency were obtained from the J-V measurements and their values were 0.42 and 8.15 %, respectively.

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