Growth of Boron-doped-ZnO by RF magnetron sputtering for CIGS solar cells

Jae Sung Hur, Jihye Kim, Samseok Jang, Jung Bin Song, Dongjin Byun, Chang Sik Son, Jae Ho Yun, Kyung Hoon Yoon

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The cell performance of CuIn1-x Gax Se2 (CIGS) thin-film solar cells fabricated using boron-doped ZnO window layers was evaluated. Boron-doped ZnO was deposited by RF magnetron sputtering using a zinc-oxide target containing 3 wt.% B2O3. Its resistivity was 1.36 × 10-2 Ω·cm and its transmittance was 85 ∼ 89 % in the wavelength range from 400 nm to 1000 nm. The transmittance was higher in the near-infrared region than in the other regions. Thus, boron-doped ZnO thin films would be suitable for use as transparent window layers of CIGS solar cells having a higher quantum efficiency on the near-infrared region. The FF and the conversion efficiency were obtained from the J-V measurements and their values were 0.42 and 8.15 %, respectively.

Original languageEnglish
Pages (from-to)442-445
Number of pages4
JournalJournal of the Korean Physical Society
Volume53
Issue number1
DOIs
Publication statusPublished - 2008 Jul

Keywords

  • B-doped ZnO
  • CIGS solar cell
  • Transparent conductive oxide (TCO)

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Hur, J. S., Kim, J., Jang, S., Song, J. B., Byun, D., Son, C. S., Yun, J. H., & Yoon, K. H. (2008). Growth of Boron-doped-ZnO by RF magnetron sputtering for CIGS solar cells. Journal of the Korean Physical Society, 53(1), 442-445. https://doi.org/10.3938/jkps.53.442