Growth of buried SiO2 layers in Si by thermal oxidation: Thermodynamic model

U. Gösele, E. Schroer, Joo Youl Huh

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Buried oxides in silicon-on-insulator (SOI) structures have been reported to grow in thickness by thermally oxidizing the superficial silicon layer. A thermodynamic model is presented which is based on the experimental observation that thermal oxidation leads to an increase of the oxygen interstitial concentration in silicon beyond its normal solubility. This increase is assumed to be proportional to the growth rate of the external thermal oxide. Discrepancies between the only two available sets of data are discussed in terms of different levels of oxidation-induced supersaturations of silicon self-interstitials.

Original languageEnglish
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995 Dec 1
Externally publishedYes

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thermodynamics
oxidation
silicon
interstitials
oxides
supersaturation
solubility
insulators
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Growth of buried SiO2 layers in Si by thermal oxidation : Thermodynamic model. / Gösele, U.; Schroer, E.; Huh, Joo Youl.

In: Applied Physics Letters, Vol. 67, 01.12.1995.

Research output: Contribution to journalArticle

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