Growth of CdTexSe1-x from a Te-rich solution for applications in radiation detection

U. N. Roy, A. E. Bolotnikov, G. S. Camarda, Y. Cui, A. Hossain, Kisung Lee, M. Marshall, G. Yang, R. B. James

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11 Citations (Scopus)

Abstract

We grew CdTexSe1-x (CTS) crystals from a Te-rich solution by using the traveling heater method (THM). The average size distribution and concentration of Te inclusions/precipitates in these as-grown samples were measured to be ~7×104 cm-3, which is much lower than values typical for the present state-of-the-art commercial CdZnTe (CZT) material. Their low-temperature photoluminescence measurement indicates high quality of the material; however the resistivity obtained via I-V curve measurements was ~5×108 Ω-cm, which is low in comparison to that required for gamma detectors. A well-resolved alpha response peak can be detected for both planar- and hemispherical detector geometry. The (μτ)e value for our as-grown sample at room temperature was found to be ~4×10-3 cm2/V.

Original languageEnglish
Pages (from-to)43-46
Number of pages4
JournalJournal of Crystal Growth
Volume386
DOIs
Publication statusPublished - 2014
Externally publishedYes

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Keywords

  • A1. Characterization
  • A1. Defects
  • A1. Te-inclusions
  • A2. THM
  • B2. CdTeSe
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Roy, U. N., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Hossain, A., Lee, K., ... James, R. B. (2014). Growth of CdTexSe1-x from a Te-rich solution for applications in radiation detection. Journal of Crystal Growth, 386, 43-46. https://doi.org/10.1016/j.jcrysgro.2013.09.039