Growth of crack-free AlGaN film on high-temperature thin AlN interlayer

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

We report on successful fabrication of crack-free thick AlGaN layers by introducing a thin AlN interlayer at the high temperature of 1000-1100°C on a high quality GaN epitaxial layer. The Al0.52Ga0.48N films grown with the optimized AlN interlayer exhibited mirror-like surface morphology and were free of cracks up to the thickness of 3μm. X-ray analyses and cathodoluminescence spectra showed excellent structural and optical quality of the AlGaN materials. Si-doped n-type AlGaN films were also grown on the high-temperature AlN interlayer, and excellent n-type conductivity was achieved up to Al0.38Ga0.62N with the electron concentration of 2.0 × 1018cm-3 and the mobility of 79 cm2/V s. Furthermore, from monochromatic cathodoluminescence images, we proposed that initial cracking of the AlN interlayer reduces the residual stress, thus preventing cracking in the AlGaN layer by generating misfit dislocations at AlGaN/AlN interface.

Original languageEnglish
Pages (from-to)305-310
Number of pages6
JournalJournal of Crystal Growth
Volume234
Issue number2-3
DOIs
Publication statusPublished - 2002 Jan 1
Externally publishedYes

Fingerprint

Cathodoluminescence
interlayers
cracks
Cracks
Epitaxial layers
cathodoluminescence
Dislocations (crystals)
Surface morphology
Residual stresses
Mirrors
Fabrication
X rays
Temperature
Electrons
residual stress
mirrors
conductivity
fabrication
aluminum gallium nitride
electrons

Keywords

  • A1. Cathodoluminescence
  • A1. Doping
  • A1. Stress
  • A3. Metalorganic chemical vapor deposition
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Growth of crack-free AlGaN film on high-temperature thin AlN interlayer. / Lee, In-Hwan; Kim, Tae Geun; Park, Yongjo.

In: Journal of Crystal Growth, Vol. 234, No. 2-3, 01.01.2002, p. 305-310.

Research output: Contribution to journalArticle

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abstract = "We report on successful fabrication of crack-free thick AlGaN layers by introducing a thin AlN interlayer at the high temperature of 1000-1100°C on a high quality GaN epitaxial layer. The Al0.52Ga0.48N films grown with the optimized AlN interlayer exhibited mirror-like surface morphology and were free of cracks up to the thickness of 3μm. X-ray analyses and cathodoluminescence spectra showed excellent structural and optical quality of the AlGaN materials. Si-doped n-type AlGaN films were also grown on the high-temperature AlN interlayer, and excellent n-type conductivity was achieved up to Al0.38Ga0.62N with the electron concentration of 2.0 × 1018cm-3 and the mobility of 79 cm2/V s. Furthermore, from monochromatic cathodoluminescence images, we proposed that initial cracking of the AlN interlayer reduces the residual stress, thus preventing cracking in the AlGaN layer by generating misfit dislocations at AlGaN/AlN interface.",
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N2 - We report on successful fabrication of crack-free thick AlGaN layers by introducing a thin AlN interlayer at the high temperature of 1000-1100°C on a high quality GaN epitaxial layer. The Al0.52Ga0.48N films grown with the optimized AlN interlayer exhibited mirror-like surface morphology and were free of cracks up to the thickness of 3μm. X-ray analyses and cathodoluminescence spectra showed excellent structural and optical quality of the AlGaN materials. Si-doped n-type AlGaN films were also grown on the high-temperature AlN interlayer, and excellent n-type conductivity was achieved up to Al0.38Ga0.62N with the electron concentration of 2.0 × 1018cm-3 and the mobility of 79 cm2/V s. Furthermore, from monochromatic cathodoluminescence images, we proposed that initial cracking of the AlN interlayer reduces the residual stress, thus preventing cracking in the AlGaN layer by generating misfit dislocations at AlGaN/AlN interface.

AB - We report on successful fabrication of crack-free thick AlGaN layers by introducing a thin AlN interlayer at the high temperature of 1000-1100°C on a high quality GaN epitaxial layer. The Al0.52Ga0.48N films grown with the optimized AlN interlayer exhibited mirror-like surface morphology and were free of cracks up to the thickness of 3μm. X-ray analyses and cathodoluminescence spectra showed excellent structural and optical quality of the AlGaN materials. Si-doped n-type AlGaN films were also grown on the high-temperature AlN interlayer, and excellent n-type conductivity was achieved up to Al0.38Ga0.62N with the electron concentration of 2.0 × 1018cm-3 and the mobility of 79 cm2/V s. Furthermore, from monochromatic cathodoluminescence images, we proposed that initial cracking of the AlN interlayer reduces the residual stress, thus preventing cracking in the AlGaN layer by generating misfit dislocations at AlGaN/AlN interface.

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