Growth of crack-free high-quality GaN on Si(111) using a low-temperature AIN interlayer: Observation of tilted domain structures in the AIN interlayer

Min Ho Kim, Young Gu Do, Hyon Chol Kang, Chel Jong Choi, Do Young Noh, Tae Yeon Seong, Seong Ju Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

We report on the growth of crack-free high-quality GaN layers on Si(111) using a low-temperature AIN interlayer (LT-AIN IL) between GaN epilayers by ultrahigh vacuum chemical vapor deposition. The use of a thin LT-AlN IL resulted in the complete elimination of cracks and significant improvements in structural and optical properties of the GaN layer. The GaN epilayer containing the LT-AlN IL exhibited a strong band-edge emission with the line width of 26.5 meV at room-temperature. Additional distinct domains with a tilt angle of ±0.9° in the LT-AlN IL, found by synchrotron X-ray diffraction, are believed to play a key role in the effective relaxation of thermal stress and the reduction of threading dislocations.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages2150-2153
Number of pages4
Edition7
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

Other

Other5th International Conference on Nitride Semiconductors, ICNS 2003
CountryJapan
CityNara
Period03/5/2503/5/30

Fingerprint

Epilayers
interlayers
cracks
Cracks
Ultrahigh vacuum
thermal stresses
Synchrotrons
Thermal stress
Linewidth
ultrahigh vacuum
Structural properties
Chemical vapor deposition
elimination
synchrotrons
Optical properties
vapor deposition
optical properties
X ray diffraction
Temperature
room temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Kim, M. H., Do, Y. G., Kang, H. C., Choi, C. J., Noh, D. Y., Seong, T. Y., & Park, S. J. (2003). Growth of crack-free high-quality GaN on Si(111) using a low-temperature AIN interlayer: Observation of tilted domain structures in the AIN interlayer. In Physica Status Solidi C: Conferences (7 ed., pp. 2150-2153) https://doi.org/10.1002/pssc.200303508

Growth of crack-free high-quality GaN on Si(111) using a low-temperature AIN interlayer : Observation of tilted domain structures in the AIN interlayer. / Kim, Min Ho; Do, Young Gu; Kang, Hyon Chol; Choi, Chel Jong; Noh, Do Young; Seong, Tae Yeon; Park, Seong Ju.

Physica Status Solidi C: Conferences. 7. ed. 2003. p. 2150-2153.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, MH, Do, YG, Kang, HC, Choi, CJ, Noh, DY, Seong, TY & Park, SJ 2003, Growth of crack-free high-quality GaN on Si(111) using a low-temperature AIN interlayer: Observation of tilted domain structures in the AIN interlayer. in Physica Status Solidi C: Conferences. 7 edn, pp. 2150-2153, 5th International Conference on Nitride Semiconductors, ICNS 2003, Nara, Japan, 03/5/25. https://doi.org/10.1002/pssc.200303508
Kim, Min Ho ; Do, Young Gu ; Kang, Hyon Chol ; Choi, Chel Jong ; Noh, Do Young ; Seong, Tae Yeon ; Park, Seong Ju. / Growth of crack-free high-quality GaN on Si(111) using a low-temperature AIN interlayer : Observation of tilted domain structures in the AIN interlayer. Physica Status Solidi C: Conferences. 7. ed. 2003. pp. 2150-2153
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abstract = "We report on the growth of crack-free high-quality GaN layers on Si(111) using a low-temperature AIN interlayer (LT-AIN IL) between GaN epilayers by ultrahigh vacuum chemical vapor deposition. The use of a thin LT-AlN IL resulted in the complete elimination of cracks and significant improvements in structural and optical properties of the GaN layer. The GaN epilayer containing the LT-AlN IL exhibited a strong band-edge emission with the line width of 26.5 meV at room-temperature. Additional distinct domains with a tilt angle of ±0.9° in the LT-AlN IL, found by synchrotron X-ray diffraction, are believed to play a key role in the effective relaxation of thermal stress and the reduction of threading dislocations.",
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