Growth of crack-free high-quality GaN on Si(111) using a low-temperature AIN interlayer: Observation of tilted domain structures in the AIN interlayer

Min Ho Kim, Young Gu Do, Hyon Chol Kang, Chel Jong Choi, Do Young Noh, Tae Yeon Seong, Seong Ju Park

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

We report on the growth of crack-free high-quality GaN layers on Si(111) using a low-temperature AIN interlayer (LT-AIN IL) between GaN epilayers by ultrahigh vacuum chemical vapor deposition. The use of a thin LT-AlN IL resulted in the complete elimination of cracks and significant improvements in structural and optical properties of the GaN layer. The GaN epilayer containing the LT-AlN IL exhibited a strong band-edge emission with the line width of 26.5 meV at room-temperature. Additional distinct domains with a tilt angle of ±0.9° in the LT-AlN IL, found by synchrotron X-ray diffraction, are believed to play a key role in the effective relaxation of thermal stress and the reduction of threading dislocations.

Original languageEnglish
Pages (from-to)2150-2153
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

ASJC Scopus subject areas

  • Condensed Matter Physics

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