The influence of P on the molecular beam epitaxial growth of cubic GaN on wurtzite GaN-on-sapphire substrates was examined. P impingement on a GaN surface induced the growth toward zinc-blende crystallization with the (111) orientation along the basal plane direction. The growth temperature played a critical role on crystallinity and P incorporation in the grown films.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)