Growth of high quality AlxGa1-xN with high Al-composition for Schottky-type UV detector using MOCVD

J. H. Lee, H. M. Ko, In-Hwan Lee, Y. J. Park, Y. H. Lee, M. B. Lee, S. H. Hahm

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Crack-free AlxGa1-xN films with an Al mole fraction of up to 37% were successfuly grown on a sapphire substrate by introducing a 10 nm-thick low-temperature (LT) AlxGa1-xN interlayer. Three AlGaN layer structures were tested for application to solar-blind UV photodetectors. Among them, Schottky diodes with a Pt/0.5 μm thick Al 0.33Ga0.67N/10 nm thick LT-Al0.33Ga 0.67N interlayer/2 μm thick n+-GaN layer exhibited the best behavior with a reverse leakage current of 9 nA at -5 V, UV-visible extinction ratio of ∼104, and responsivity of 0.15 A/W at 280 nm.

Original languageEnglish
Pages (from-to)103-106
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number1
DOIs
Publication statusPublished - 2002 Dec 1
Externally publishedYes
Event2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany
Duration: 2002 Jul 222002 Jul 25

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metalorganic chemical vapor deposition
interlayers
detectors
Schottky diodes
photometers
sapphire
extinction
leakage
cracks

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Growth of high quality AlxGa1-xN with high Al-composition for Schottky-type UV detector using MOCVD. / Lee, J. H.; Ko, H. M.; Lee, In-Hwan; Park, Y. J.; Lee, Y. H.; Lee, M. B.; Hahm, S. H.

In: Physica Status Solidi C: Conferences, No. 1, 01.12.2002, p. 103-106.

Research output: Contribution to journalConference article

Lee, J. H. ; Ko, H. M. ; Lee, In-Hwan ; Park, Y. J. ; Lee, Y. H. ; Lee, M. B. ; Hahm, S. H. / Growth of high quality AlxGa1-xN with high Al-composition for Schottky-type UV detector using MOCVD. In: Physica Status Solidi C: Conferences. 2002 ; No. 1. pp. 103-106.
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abstract = "Crack-free AlxGa1-xN films with an Al mole fraction of up to 37{\%} were successfuly grown on a sapphire substrate by introducing a 10 nm-thick low-temperature (LT) AlxGa1-xN interlayer. Three AlGaN layer structures were tested for application to solar-blind UV photodetectors. Among them, Schottky diodes with a Pt/0.5 μm thick Al 0.33Ga0.67N/10 nm thick LT-Al0.33Ga 0.67N interlayer/2 μm thick n+-GaN layer exhibited the best behavior with a reverse leakage current of 9 nA at -5 V, UV-visible extinction ratio of ∼104, and responsivity of 0.15 A/W at 280 nm.",
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AU - Lee, J. H.

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AU - Park, Y. J.

AU - Lee, Y. H.

AU - Lee, M. B.

AU - Hahm, S. H.

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AB - Crack-free AlxGa1-xN films with an Al mole fraction of up to 37% were successfuly grown on a sapphire substrate by introducing a 10 nm-thick low-temperature (LT) AlxGa1-xN interlayer. Three AlGaN layer structures were tested for application to solar-blind UV photodetectors. Among them, Schottky diodes with a Pt/0.5 μm thick Al 0.33Ga0.67N/10 nm thick LT-Al0.33Ga 0.67N interlayer/2 μm thick n+-GaN layer exhibited the best behavior with a reverse leakage current of 9 nA at -5 V, UV-visible extinction ratio of ∼104, and responsivity of 0.15 A/W at 280 nm.

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