Crack-free AlxGa1-xN films with an Al mole fraction of up to 37% were successfuly grown on a sapphire substrate by introducing a 10 nm-thick low-temperature (LT) AlxGa1-xN interlayer. Three AlGaN layer structures were tested for application to solar-blind UV photodetectors. Among them, Schottky diodes with a Pt/0.5 μm thick Al 0.33Ga0.67N/10 nm thick LT-Al0.33Ga 0.67N interlayer/2 μm thick n+-GaN layer exhibited the best behavior with a reverse leakage current of 9 nA at -5 V, UV-visible extinction ratio of ∼104, and responsivity of 0.15 A/W at 280 nm.
|Number of pages||4|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - 2002 Dec 1|
|Event||2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany|
Duration: 2002 Jul 22 → 2002 Jul 25
ASJC Scopus subject areas
- Condensed Matter Physics