Growth of high quality AlxGa1-xN with high Al-composition for Schottky-type UV detector using MOCVD

J. H. Lee, H. M. Ko, I. H. Lee, Y. J. Park, Y. H. Lee, M. B. Lee, S. H. Hahm

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Crack-free AlxGa1-xN films with an Al mole fraction of up to 37% were successfuly grown on a sapphire substrate by introducing a 10 nm-thick low-temperature (LT) AlxGa1-xN interlayer. Three AlGaN layer structures were tested for application to solar-blind UV photodetectors. Among them, Schottky diodes with a Pt/0.5 μm thick Al 0.33Ga0.67N/10 nm thick LT-Al0.33Ga 0.67N interlayer/2 μm thick n+-GaN layer exhibited the best behavior with a reverse leakage current of 9 nA at -5 V, UV-visible extinction ratio of ∼104, and responsivity of 0.15 A/W at 280 nm.

Original languageEnglish
Pages (from-to)103-106
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number1
DOIs
Publication statusPublished - 2002 Dec 1
Externally publishedYes
Event2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany
Duration: 2002 Jul 222002 Jul 25

ASJC Scopus subject areas

  • Condensed Matter Physics

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