Growth of high-quality GaN on Si(111) substrate by ultrahigh vacuum chemical vapor deposition

Min H. Kim, Young Churl Bang, Nae M. Park, Chel Jong Choi, Tae Yeon Seong, Seong J. Park

Research output: Contribution to journalArticle

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Abstract

An ultrahigh vacuum chemical vapor deposition (UHVCVD) system was employed to grow high-quality GaN on a Si (111) substrate using a thin AlN buffer layer. X-ray diffraction, high-resolution electron microscopy (HREM), and photoluminescence (PL) data indicate that a single crystalline GaN layer with a wurtzite structure was epitaxially grown on a silicon substrate. The full width at half maximum (FWHM) of the x-ray rocking curve for the GaN (0002) diffraction was 16.7 arc min. A cross-sectional HREM image showed an amorphous SiNx layer at the Si/AlN interface, as well as stacking faults and inversion domain boundaries in the GaN epilayer. An intense PL emission line, which is associated with the recombination of the donor bound exciton, was observed at 10 K PL spectra (FWHM=6.8 meV) and a strong band edge emission was obtained (FWHM=33 meV) as well, even at room temperature. These results indicate that high-quality GaN can be grown on Si (111) substrates using a UHVCVD growth method.

Original languageEnglish
Pages (from-to)2858-2860
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number19
DOIs
Publication statusPublished - 2001 May 7
Externally publishedYes

Fingerprint

ultrahigh vacuum
vapor deposition
photoluminescence
electron microscopy
high resolution
diffraction
crystal defects
wurtzite
x rays
arcs
buffers
excitons
inversions
silicon
room temperature
curves

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Growth of high-quality GaN on Si(111) substrate by ultrahigh vacuum chemical vapor deposition. / Kim, Min H.; Bang, Young Churl; Park, Nae M.; Choi, Chel Jong; Seong, Tae Yeon; Park, Seong J.

In: Applied Physics Letters, Vol. 78, No. 19, 07.05.2001, p. 2858-2860.

Research output: Contribution to journalArticle

Kim, Min H. ; Bang, Young Churl ; Park, Nae M. ; Choi, Chel Jong ; Seong, Tae Yeon ; Park, Seong J. / Growth of high-quality GaN on Si(111) substrate by ultrahigh vacuum chemical vapor deposition. In: Applied Physics Letters. 2001 ; Vol. 78, No. 19. pp. 2858-2860.
@article{3b534c7a4ea744e396fb44dabc0801e2,
title = "Growth of high-quality GaN on Si(111) substrate by ultrahigh vacuum chemical vapor deposition",
abstract = "An ultrahigh vacuum chemical vapor deposition (UHVCVD) system was employed to grow high-quality GaN on a Si (111) substrate using a thin AlN buffer layer. X-ray diffraction, high-resolution electron microscopy (HREM), and photoluminescence (PL) data indicate that a single crystalline GaN layer with a wurtzite structure was epitaxially grown on a silicon substrate. The full width at half maximum (FWHM) of the x-ray rocking curve for the GaN (0002) diffraction was 16.7 arc min. A cross-sectional HREM image showed an amorphous SiNx layer at the Si/AlN interface, as well as stacking faults and inversion domain boundaries in the GaN epilayer. An intense PL emission line, which is associated with the recombination of the donor bound exciton, was observed at 10 K PL spectra (FWHM=6.8 meV) and a strong band edge emission was obtained (FWHM=33 meV) as well, even at room temperature. These results indicate that high-quality GaN can be grown on Si (111) substrates using a UHVCVD growth method.",
author = "Kim, {Min H.} and Bang, {Young Churl} and Park, {Nae M.} and Choi, {Chel Jong} and Seong, {Tae Yeon} and Park, {Seong J.}",
year = "2001",
month = "5",
day = "7",
doi = "10.1063/1.1371539",
language = "English",
volume = "78",
pages = "2858--2860",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

TY - JOUR

T1 - Growth of high-quality GaN on Si(111) substrate by ultrahigh vacuum chemical vapor deposition

AU - Kim, Min H.

AU - Bang, Young Churl

AU - Park, Nae M.

AU - Choi, Chel Jong

AU - Seong, Tae Yeon

AU - Park, Seong J.

PY - 2001/5/7

Y1 - 2001/5/7

N2 - An ultrahigh vacuum chemical vapor deposition (UHVCVD) system was employed to grow high-quality GaN on a Si (111) substrate using a thin AlN buffer layer. X-ray diffraction, high-resolution electron microscopy (HREM), and photoluminescence (PL) data indicate that a single crystalline GaN layer with a wurtzite structure was epitaxially grown on a silicon substrate. The full width at half maximum (FWHM) of the x-ray rocking curve for the GaN (0002) diffraction was 16.7 arc min. A cross-sectional HREM image showed an amorphous SiNx layer at the Si/AlN interface, as well as stacking faults and inversion domain boundaries in the GaN epilayer. An intense PL emission line, which is associated with the recombination of the donor bound exciton, was observed at 10 K PL spectra (FWHM=6.8 meV) and a strong band edge emission was obtained (FWHM=33 meV) as well, even at room temperature. These results indicate that high-quality GaN can be grown on Si (111) substrates using a UHVCVD growth method.

AB - An ultrahigh vacuum chemical vapor deposition (UHVCVD) system was employed to grow high-quality GaN on a Si (111) substrate using a thin AlN buffer layer. X-ray diffraction, high-resolution electron microscopy (HREM), and photoluminescence (PL) data indicate that a single crystalline GaN layer with a wurtzite structure was epitaxially grown on a silicon substrate. The full width at half maximum (FWHM) of the x-ray rocking curve for the GaN (0002) diffraction was 16.7 arc min. A cross-sectional HREM image showed an amorphous SiNx layer at the Si/AlN interface, as well as stacking faults and inversion domain boundaries in the GaN epilayer. An intense PL emission line, which is associated with the recombination of the donor bound exciton, was observed at 10 K PL spectra (FWHM=6.8 meV) and a strong band edge emission was obtained (FWHM=33 meV) as well, even at room temperature. These results indicate that high-quality GaN can be grown on Si (111) substrates using a UHVCVD growth method.

UR - http://www.scopus.com/inward/record.url?scp=0035820756&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035820756&partnerID=8YFLogxK

U2 - 10.1063/1.1371539

DO - 10.1063/1.1371539

M3 - Article

VL - 78

SP - 2858

EP - 2860

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

ER -