Growth of InAs GaSb strained layer superlattices. II

G. R. Booker, P. C. Klipstein, M. Lakrimi, S. Lyapin, N. J. Mason, I. J. Murgatroyd, R. J. Nicholas, Tae Yeon Seong, D. M. Symons, P. J. Walker

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25 Citations (Scopus)

Abstract

InAs GaSb strained layer superlattices (SLSs) have been grown by metalorganic vapour phase epitaxy (MOVPE) at atmospheric pressure. Initially the interfaces of the SLS have been biased towards pairs of GaAs or InSb using three different gas switching sequences. Room temperature Raman optical modes show that growing the interfaces using an ALE (atomic layer epitaxy) like switching sequence gives interfaces of very high quality probably near the optimum, which is a monolayer, Growing with other switching sequences leads to one of the interfaces being non-uniform. By growing samples with alternating (InSb,GaAs or GaAs,InSb) pairs of interfaces it is possible to unambiguously assign this non-uniformity to one of the two possible interfaces for the first time. Furthermore, the influence of the band overlap on interface type has been studied using optimised SLSs in the semimetallic regime.

Original languageEnglish
Pages (from-to)495-502
Number of pages8
JournalJournal of Crystal Growth
Volume146
Issue number1-4
Publication statusPublished - 1995 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Inorganic Chemistry
  • Materials Chemistry
  • Condensed Matter Physics

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    Booker, G. R., Klipstein, P. C., Lakrimi, M., Lyapin, S., Mason, N. J., Murgatroyd, I. J., Nicholas, R. J., Seong, T. Y., Symons, D. M., & Walker, P. J. (1995). Growth of InAs GaSb strained layer superlattices. II. Journal of Crystal Growth, 146(1-4), 495-502.