Growth of InAs/GaSb strained layer superlattices. I

G. R. Booker, P. C. Klipstein, M. Lakrimi, S. Lyapin, N. J. Mason, R. J. Nicholas, Tae Yeon Seong, D. M. Symons, T. A. Vaughan, P. J. Walker

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

InAs/GaSb strained layer superlattices (SLSs) have been grown by metalorganic vapour phase epitaxy (MOVPE) at atmospheric pressure. Whilst long period SLSs have been successfully grown by this technique, the growth of short period structures is adversely affected by step-bunching. By growing the SLSs faster and cooler, good periodicity was achieved as measured by Raman spectroscopy, transmission electron microscopy (TEM) and X-ray diffraction (XRD) in SLSs with bilayer (GaSb + InAs) thicknesses as thin as 50 Å. We have also detected the InSb-like and GaAs-like interface modes from room temperature Raman measurements for the first time in MOVPE grown samples. The most promising samples have been assessed by FIR photoconductivity at 4.2 K and show bandgaps (dependent on the bilayer thickness) between 5 and 20 μm.

Original languageEnglish
Pages (from-to)778-785
Number of pages8
JournalJournal of Crystal Growth
Volume145
Issue number1-4
Publication statusPublished - 1994 Dec 2
Externally publishedYes

Fingerprint

Superlattices
superlattices
Metallorganic vapor phase epitaxy
vapor phase epitaxy
bunching
Photoconductivity
coolers
photoconductivity
Atmospheric pressure
Raman spectroscopy
periodic variations
atmospheric pressure
Energy gap
Transmission electron microscopy
X ray diffraction
transmission electron microscopy
indium arsenide
room temperature
diffraction
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Booker, G. R., Klipstein, P. C., Lakrimi, M., Lyapin, S., Mason, N. J., Nicholas, R. J., ... Walker, P. J. (1994). Growth of InAs/GaSb strained layer superlattices. I. Journal of Crystal Growth, 145(1-4), 778-785.

Growth of InAs/GaSb strained layer superlattices. I. / Booker, G. R.; Klipstein, P. C.; Lakrimi, M.; Lyapin, S.; Mason, N. J.; Nicholas, R. J.; Seong, Tae Yeon; Symons, D. M.; Vaughan, T. A.; Walker, P. J.

In: Journal of Crystal Growth, Vol. 145, No. 1-4, 02.12.1994, p. 778-785.

Research output: Contribution to journalArticle

Booker, GR, Klipstein, PC, Lakrimi, M, Lyapin, S, Mason, NJ, Nicholas, RJ, Seong, TY, Symons, DM, Vaughan, TA & Walker, PJ 1994, 'Growth of InAs/GaSb strained layer superlattices. I', Journal of Crystal Growth, vol. 145, no. 1-4, pp. 778-785.
Booker GR, Klipstein PC, Lakrimi M, Lyapin S, Mason NJ, Nicholas RJ et al. Growth of InAs/GaSb strained layer superlattices. I. Journal of Crystal Growth. 1994 Dec 2;145(1-4):778-785.
Booker, G. R. ; Klipstein, P. C. ; Lakrimi, M. ; Lyapin, S. ; Mason, N. J. ; Nicholas, R. J. ; Seong, Tae Yeon ; Symons, D. M. ; Vaughan, T. A. ; Walker, P. J. / Growth of InAs/GaSb strained layer superlattices. I. In: Journal of Crystal Growth. 1994 ; Vol. 145, No. 1-4. pp. 778-785.
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