The substrate preparation of gallium nitride, both ex-situ and in-situ, and the growth of magnesium oxide, MgO, and scandium oxide, 80203, by plasma assisted gas-source molecular beam epitaxy (GSMBE) are presented. These oxides are employed as field passivation of AlGaN/GaN high electron mobility transistor (HEMT) devices and gate dielectrics for test diodes and metal oxide semiconductor HEMTs (MOSHEMTs). Ex-situ cleaning techniques include wet chemical etching and UV-ozone treatments and in-situ techniques include thermal and plasma treatments. Various growth recipes have been explored to produce MgO and Sc 2O 3 films with different morphologies and stoichiometry. The end result is a dielectric material with an oxide/nitride interface with low interface trap density and interface stability to allow for inversion to be demonstrated in GaN as well as reduce the current collapse phenomenon to minimum impact on HEMT device operation.
|Number of pages||12|
|Publication status||Published - 2003|
|Event||State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States|
Duration: 2003 Oct 12 → 2003 Oct 17
|Other||State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium|
|Period||03/10/12 → 03/10/17|
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