Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics

B. P. Gila, B. Luo, Ji Hyun Kim, R. Mehandru, J. R. Laroche, A. H. Onstine, C. R. Abemathy, F. Ren, S. J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The substrate preparation of gallium nitride, both ex-situ and in-situ, and the growth of magnesium oxide, MgO, and scandium oxide, 80203, by plasma assisted gas-source molecular beam epitaxy (GSMBE) are presented. These oxides are employed as field passivation of AlGaN/GaN high electron mobility transistor (HEMT) devices and gate dielectrics for test diodes and metal oxide semiconductor HEMTs (MOSHEMTs). Ex-situ cleaning techniques include wet chemical etching and UV-ozone treatments and in-situ techniques include thermal and plasma treatments. Various growth recipes have been explored to produce MgO and Sc 2O 3 films with different morphologies and stoichiometry. The end result is a dielectric material with an oxide/nitride interface with low interface trap density and interface stability to allow for inversion to be demonstrated in GaN as well as reduce the current collapse phenomenon to minimum impact on HEMT device operation.

Original languageEnglish
Title of host publicationProceedings - Electrochemical Society
EditorsR.F. Kopt, A.G. Baca, S.J. Pearton, F. Ren
Pages212-223
Number of pages12
Volume11
Publication statusPublished - 2003 Dec 1
Externally publishedYes
EventState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States
Duration: 2003 Oct 122003 Oct 17

Other

OtherState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
CountryUnited States
CityOrlando,FL
Period03/10/1203/10/17

Fingerprint

Scandium
Magnesia
High electron mobility transistors
Passivation
Oxides
Gas source molecular beam epitaxy
Plasmas
Gallium nitride
Wet etching
Gate dielectrics
Nitrides
Stoichiometry
Ozone
Cleaning
Diodes
Substrates
Metals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Gila, B. P., Luo, B., Kim, J. H., Mehandru, R., Laroche, J. R., Onstine, A. H., ... Pearton, S. J. (2003). Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics. In R. F. Kopt, A. G. Baca, S. J. Pearton, & F. Ren (Eds.), Proceedings - Electrochemical Society (Vol. 11, pp. 212-223)

Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics. / Gila, B. P.; Luo, B.; Kim, Ji Hyun; Mehandru, R.; Laroche, J. R.; Onstine, A. H.; Abemathy, C. R.; Ren, F.; Pearton, S. J.

Proceedings - Electrochemical Society. ed. / R.F. Kopt; A.G. Baca; S.J. Pearton; F. Ren. Vol. 11 2003. p. 212-223.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gila, BP, Luo, B, Kim, JH, Mehandru, R, Laroche, JR, Onstine, AH, Abemathy, CR, Ren, F & Pearton, SJ 2003, Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics. in RF Kopt, AG Baca, SJ Pearton & F Ren (eds), Proceedings - Electrochemical Society. vol. 11, pp. 212-223, State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States, 03/10/12.
Gila BP, Luo B, Kim JH, Mehandru R, Laroche JR, Onstine AH et al. Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics. In Kopt RF, Baca AG, Pearton SJ, Ren F, editors, Proceedings - Electrochemical Society. Vol. 11. 2003. p. 212-223
Gila, B. P. ; Luo, B. ; Kim, Ji Hyun ; Mehandru, R. ; Laroche, J. R. ; Onstine, A. H. ; Abemathy, C. R. ; Ren, F. ; Pearton, S. J. / Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics. Proceedings - Electrochemical Society. editor / R.F. Kopt ; A.G. Baca ; S.J. Pearton ; F. Ren. Vol. 11 2003. pp. 212-223
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AU - Luo, B.

AU - Kim, Ji Hyun

AU - Mehandru, R.

AU - Laroche, J. R.

AU - Onstine, A. H.

AU - Abemathy, C. R.

AU - Ren, F.

AU - Pearton, S. J.

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N2 - The substrate preparation of gallium nitride, both ex-situ and in-situ, and the growth of magnesium oxide, MgO, and scandium oxide, 80203, by plasma assisted gas-source molecular beam epitaxy (GSMBE) are presented. These oxides are employed as field passivation of AlGaN/GaN high electron mobility transistor (HEMT) devices and gate dielectrics for test diodes and metal oxide semiconductor HEMTs (MOSHEMTs). Ex-situ cleaning techniques include wet chemical etching and UV-ozone treatments and in-situ techniques include thermal and plasma treatments. Various growth recipes have been explored to produce MgO and Sc 2O 3 films with different morphologies and stoichiometry. The end result is a dielectric material with an oxide/nitride interface with low interface trap density and interface stability to allow for inversion to be demonstrated in GaN as well as reduce the current collapse phenomenon to minimum impact on HEMT device operation.

AB - The substrate preparation of gallium nitride, both ex-situ and in-situ, and the growth of magnesium oxide, MgO, and scandium oxide, 80203, by plasma assisted gas-source molecular beam epitaxy (GSMBE) are presented. These oxides are employed as field passivation of AlGaN/GaN high electron mobility transistor (HEMT) devices and gate dielectrics for test diodes and metal oxide semiconductor HEMTs (MOSHEMTs). Ex-situ cleaning techniques include wet chemical etching and UV-ozone treatments and in-situ techniques include thermal and plasma treatments. Various growth recipes have been explored to produce MgO and Sc 2O 3 films with different morphologies and stoichiometry. The end result is a dielectric material with an oxide/nitride interface with low interface trap density and interface stability to allow for inversion to be demonstrated in GaN as well as reduce the current collapse phenomenon to minimum impact on HEMT device operation.

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