Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics

B. P. Gila, B. Luo, J. Kim, R. Mehandru, J. R. Laroche, A. H. Onstine, C. R. Abemathy, F. Ren, S. J. Pearton

Research output: Contribution to conferencePaperpeer-review

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Engineering & Materials Science